Resistive-memory embedded unified RAM (R-URAM)

IEEE Transactions on Electron Devices

Volumn 56, Issue 11, 2009, Pages 2670-2674

  Kim, Sungho ^a   Choi, Sung Jin ^a   Choi, Yang Kyu ^a  

^a Korea Advanced Institute of Science and Technology (KAIST)   (South Korea)

Author keywords

Capacitorless dynamic random access memory (1T DRAM); Disturb free; Dynamic random access memory (DRAM); Nonvolatile memory (NVM); Resistance random access memory (RRAM); Resistive memory embedded unified RAM (R URAM); Soft programming; Unified RAM (URAM)

Indexed keywords

CAPACITORLESS DYNAMIC RANDOM ACCESS MEMORY (1T-DRAM); DISTURB-FREE; DYNAMIC RANDOM ACCESS MEMORY (DRAM); NONVOLATILE MEMORY (NVM); RESISTANCE RANDOM ACCESS MEMORY (RRAM); RESISTIVE-MEMORY EMBEDDED UNIFIED RAM (R-URAM); SOFT PROGRAMMING; UNIFIED RAM (URAM);

CHARGE TRAPPING; SOLID-STATE SENSORS; STRONTIUM COMPOUNDS; SWITCHING SYSTEMS;

DYNAMIC RANDOM ACCESS STORAGE;

EID: 70350741211     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2009.2030441     Document Type: Article

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