Band offset FinFET-based URAM (unified-RAM) built on SiC for multi-functioning NVM and capacitorless 1T-DRAM

Digest of Technical Papers - Symposium on VLSI Technology

Volumn , Issue , 2008, Pages 200-201

  Han, Jin Woo ^a   Ryu, Seong Wan ^a   Kim, Sungho ^a   Kim, Chung Jin ^a   Ahn, Jae Hyuk ^a   Choi, Sung Jin ^a   Kyu, Jin Choi ^b   Byung, Jin Cho ^a   Jin, Soo Kim ^c   Kwang, Hee Kim ^c   Gi, Sung Lee ^c   Jae, Sub Oh ^c   Myong, Ho Song ^c   Yun, Chang Park ^c   Jeoung, Woo Kim ^c   Choi, Yang Kyu ^a  

^a Korea Advanced Institute of Science and Technology (KAIST)   (South Korea)

^b Jusung Engineering Ltd   (South Korea)

^c National Nano Fab Center (NNFC)   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

DYNAMIC RANDOM ACCESS STORAGE; GATE DIELECTRICS; GATES (TRANSISTOR); OPTICAL DESIGN; RANDOM ACCESS STORAGE; SILICON CARBIDE; TECHNOLOGY;

BAND OFFSETS; BULK FINFET; EPITAXIALLY GROWN; FLOATING BODIES; HIGH SPEEDS; MEM ORY OPERATIONS; NON-VOLATILE MEMORY; OXIDE/NITRIDE/OXIDE; SINGLE TRANSISTORS; VLSI TECHNOLOGIES;

FIELD EFFECT TRANSISTORS;

EID: 51949086339     PISSN: 07431562     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/VLSIT.2008.4588618     Document Type: Conference Paper

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