Partially depleted SONOS FinFET for unified RAM (URAM) - Unified function for high-speed 1T DRAM and nonvolatile memory

IEEE Electron Device Letters

Volumn 29, Issue 7, 2008, Pages 781-783

  Han, Jin Woo ^a   Ryu, Seong Wan ^a   Kim, Chung Jin ^a   Kim, Sungho ^a   Im, Maesoon ^a   Choi, Sung Jin ^a   Kim, Jin Soo ^b   Kim, Kwang Hee ^b   Lee, Gi Sung ^b   Oh, Jae Sub ^b   Song, Myeong Ho ^b   Park, Yun Chang ^b   Kim, Jeoung Woo ^b   Choi, Yang Kyu ^a  

^a Korea Advanced Institute of Science and Technology (KAIST)   (South Korea)

^b National Nano Fab Center (NNFC)   (South Korea)

Author keywords

1T DRAM; Capacitorless DRAM; FinFET; Nonvolatile memory (NVM); SONOS; Unified RAM (URAM)

Indexed keywords

ELECTRIC CURRENTS; ELECTRIC MACHINE INSULATION; FIELD EFFECT TRANSISTORS; OPTICAL DESIGN; RANDOM ACCESS STORAGE; SPEED;

CELL TRANSISTORS; FINFETS; FOWLER-NORDHEIM (FN) TUNNELING; HIGH SPEEDS; HOLE ACCUMULATION; MEMORY FUNCTIONS; NON-VOLATILE MEMORY (NVM); OXIDE/NITRIDE/OXIDE (ONO); PARTIALLY DEPLETED; PARTIALLY-DEPLETED (PD); RANDOM ACCESS MEMORIES; RETENTION TIME (RT);

DYNAMIC RANDOM ACCESS STORAGE;

EID: 47249136108     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2008.2000616     Document Type: Article

References (5)

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