Energy band engineered unified-RAM (URAM) for multi-functioning 1T-DRAM and NVM

Technical Digest - International Electron Devices Meeting, IEDM

Volumn , Issue , 2008, Pages

  Han, Jin Woo ^a   Ryu, Seong Wan ^a   Kim, Sungho ^a   Kim, Chung Jin ^a   Ahn, Jae Hyuk ^a   Choi, Sung Jin ^b   Choi, Kyu Jin ^a   Cho, Byung Jin ^c   Kim, Jin Soo ^c   Kim, Kwang Hee ^c   Lee, Gi Sung ^c   Oh, Jae Sub ^c   Song, Myong Ho ^c   Park, Yun Chang ^c   Kim, Jeoung Woo ^c   Choi, Yang Kyu ^a  

^a Korea Advanced Institute of Science and Technology (KAIST)   (South Korea)

^b Jusung Engineering Ltd   (South Korea)

^c National Nano Fab Center (NNFC)   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

BULK SUBSTRATES; CAPACITOR-LESS; ELECTRON STORAGES; ENERGY BANDS; EPITAXIALLY GROWN; FLOATING BODIES; HIGH-SPEED; MEMORY TECHNOLOGIES; NITRIDE TRAPS; NON-VOLATILE MEMORIES; SILICON-BASED; SINGLE TRANSISTORS;

BAND STRUCTURE; ELECTRON DEVICES; GATE DIELECTRICS; GATES (TRANSISTOR); GERMANIUM; NITRIDES;

DYNAMIC RANDOM ACCESS STORAGE;

EID: 64549145387     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/IEDM.2008.4796658     Document Type: Conference Paper

References (4)

1. J.-W. Han et al., IEDM Tech. Dig, p. 929, 2007.
2. J.-W. Han et al., Symp. VLSI Tech. Dig., p. 200, 2008.
3. C. G. Van de Wall et al.,, PR-B, p. 8154, 1987.
4. M. E. Kurdi et al.,, PR-B, p. 195327, 2006.