A bulk FinFET unified-RAM (URAM) cell for multifunctioning NVM and capacitorless 1T-DRAM

IEEE Electron Device Letters

Volumn 29, Issue 6, 2008, Pages 632-634

  Han, Jin Woo ^a   Ryu, Seong Wan ^a   Kim, Sungho ^a   Kim, Chung Jin ^a   Ahn, Jae Hyuk ^a   Choi, Sung Jin ^a   Kim, Jin Soo ^b   Kim, Kwang Hee ^b   Lee, Gi Sung ^b   Oh, Jae Sub ^b   Song, Myeong Ho ^b   Park, Yun Chang ^b   Kim, Jeoung Woo ^b   Choi, Yang Kyu ^a  

^a Korea Advanced Institute of Science and Technology (KAIST)   (South Korea)

^b National Nano Fab Center (NNFC)   (South Korea)

Author keywords

1T DRAM; Bulk FinFET; Capacitorless DRAM; FinFET; Nonvolatile memory (NVM); SONOS; Unified RAM (URAM)

Indexed keywords

COMPUTER NETWORKS; COST EFFECTIVENESS; DYNAMIC RANDOM ACCESS STORAGE; FIELD EFFECT TRANSISTORS; RANDOM ACCESS STORAGE; TECHNOLOGY;

(+ MOD 2N) OPERATION; (E ,3E) PROCESS; BULK FINFET; BULK SUBSTRATES; CELL TECHNOLOGY; HEAT DISSIPATION; HIGH SPEEDS; HOLE ACCUMULATION; MEMORY FUNCTIONS; NON-VOLATILE; OXIDE/NITRIDE/OXIDE (ONO); SINGLE TRANSISTORS; WELL TECHNOLOGIES;

MICROFLUIDICS;

EID: 45749136833     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2008.922142     Document Type: Article

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