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Volumn 367, Issue 1905, 2009, Pages 4169-4179

From silicon to organic nanoparticle memory devices

Author keywords

Chemical self assembly; Langmuir blodgett; Nanoparticle memories; Organic dielectrics

Indexed keywords

FLASH MEMORY; HYBRID MATERIALS; SELF ASSEMBLY;

EID: 70350675457     PISSN: 1364503X     EISSN: None     Source Type: Journal    
DOI: 10.1098/rsta.2008.0280     Document Type: Article
Times cited : (28)

References (25)
  • 1
    • 20344397429 scopus 로고    scopus 로고
    • (eds A. Claverie, D. Tsoukalas, T.-J. KingJ. M. Slaughter). Boston, MA: Materials Research Society
    • Clementi, P. C. & Bez, R. 2005 In Materials and processes for nonvolatile memories, vol. 830 (eds A. Claverie, D. Tsoukalas, T.-J. King & J. M. Slaughter), p. 13. Boston, MA: Materials Research Society.
    • (2005) Materials and Processes for Nonvolatile Memories , vol.830 , pp. 13
    • Clementi, P.C.1    Bez, R.2
  • 2
    • 0001670402 scopus 로고    scopus 로고
    • Low-voltage, 30 nm channel length, organic transistors with a self-assembled monolayer as gate insulating films
    • doi:10.1063/l.126219
    • Collet, J., Tharaud, O., Chapoton, A. & Vuillaume, D. 2000 Low-voltage, 30 nm channel length, organic transistors with a self-assembled monolayer as gate insulating films. Appl. Phys. Lett. 76, 1941. (doi:10.1063/l.126219)
    • (2000) Appl. Phys. Lett. , vol.76 , pp. 1941
    • Collet, J.1    Tharaud, O.2    Chapoton, A.3    Vuillaume, D.4
  • 3
    • 2942648428 scopus 로고    scopus 로고
    • Silicon nanocrystal memory devices obtained by ultra-low-energy ion- beam synthesis
    • doi:10.1016/j.sse.2004.03.016
    • Dimitrakis, P. et al. 2004 Silicon nanocrystal memory devices obtained by ultra-low-energy ion- beam synthesis. Solid-State Electron. 48, 1511-1517. (doi:10.1016/j.sse.2004.03.016)
    • (2004) Solid-State Electron. , vol.48 , pp. 1511-1517
    • Dimitrakis, P.1
  • 5
    • 0034315780 scopus 로고    scopus 로고
    • NROM: A novel localized trapping, 2-bit nonvolatile memory cell
    • doi: 10.1109/ 55.877205
    • Eitan, B., Pavan, P., Bloom, I., Aloni, E., Flommer, A. & Finzi, D. 2000 NROM: a novel localized trapping, 2-bit nonvolatile memory cell. IEEE Electron. Dev. Lett. 21, 543-545. (doi: 10.1109/ 55.877205)
    • (2000) IEEE Electron. Dev. Lett. , vol.21 , pp. 543-545
    • Eitan, B.1    Pavan, P.2    Bloom, I.3    Aloni, E.4    Flommer, A.5    Finzi, D.6
  • 6
    • 19744381480 scopus 로고    scopus 로고
    • Flash memory scaling
    • Fazio, A. 2004 Flash memory scaling. MRS Bull. 29, 814-817.
    • (2004) MRS Bull. , vol.29 , pp. 814-817
    • Fazio, A.1
  • 10
    • 10744233890 scopus 로고    scopus 로고
    • Hybrid silicon-organic nanoparticle memory device
    • doi:10.1063/1.1604962
    • Kolliopoulou, S. et al. 2003 Hybrid silicon-organic nanoparticle memory device. J. Appl. Phys. 94, 5234. (doi:10.1063/1.1604962)
    • (2003) J. Appl. Phys. , vol.94 , pp. 5234
    • Kolliopoulou, S.1
  • 12
    • 13244267365 scopus 로고    scopus 로고
    • Self-assembly of metal nanocrystals on ultrathin oxide for nonvolatile memory applications
    • doi:10.1007/S11664-005-0172-8
    • Lee, C. H., Meteer, J., Narayanan, V. & Kan, E. C. 2005 Self-assembly of metal nanocrystals on ultrathin oxide for nonvolatile memory applications. J. Electron. Mater. 34, 1-11. (doi:10.1007/S11664-005-0172-8)
    • (2005) J. Electron. Mater. , vol.34 , pp. 1-11
    • Lee, C.H.1    Meteer, J.2    Narayanan, V.3    Kan, E.C.4
  • 13
    • 17944366920 scopus 로고    scopus 로고
    • 2 dielectric for nonvolatile memory device applications
    • doi:10.1063/l. 1881778
    • 2 dielectric for nonvolatile memory device applications. Appl. Phys. Lett. 86, 103505. (doi:10.1063/l. 1881778)
    • (2005) Appl. Phys. Lett. , vol.86 , pp. 103505
    • Lee, J.J.1    Harada, Y.2    Pyun, J.W.3    Kwong, D.L.4
  • 14
    • 33846567589 scopus 로고    scopus 로고
    • Charging phenomena in pentacene-gold nanoparticle memory device
    • DOI 10.1063/1.2435598
    • Leong, W. L., Lee, P. S., Mhaisalkar, S. G., Chen, T. P. & Dodabalapur, A. 2007 Charging phenomena in pentacene-gold nanoparticle memory device. Appl. Phys. Lett. 90, 042906. (doi: 10.1063/1.2435598) (Pubitemid 46184665)
    • (2007) Applied Physics Letters , vol.90 , Issue.4 , pp. 042906
    • Leong, W.L.1    Lee, P.S.2    Mhaisalkar, S.G.3    Chen, T.P.4    Dodabalapur, A.5
  • 15
    • 54949148764 scopus 로고    scopus 로고
    • Non-volatile organic memory applications enabled by in situ synthesis of gold nanoparticles in a self-assembled block copolymer
    • doi: 10.1002/adma.200702567
    • Leong, W. L., Lee, P. S., Lohani, A., Lam, Y. M., Chen, T., Zhang, S., Dodabalapur, A. & Mhaisalkar, S. G. 2008 Non-volatile organic memory applications enabled by in situ synthesis of gold nanoparticles in a self-assembled block copolymer. Adv. Mater. 20, 2325-2331. (doi: 10.1002/adma.200702567)
    • (2008) Adv. Mater. , vol.20 , pp. 2325-2331
    • Lohani, A.1    Lam, Y.M.2    Chen, T.3    Zhang, S.4    Dodabalapur, A.5    Mhaisalkar, S.G.6
  • 16
    • 0036714604 scopus 로고    scopus 로고
    • Metal nanocrystal memories - Part I: Device design and fabrication
    • DOI 10.1109/TED.2002.802617, PII 1011092002802617
    • Liu, Z. T., Lee, C, Narayanan, V., Pei, G. & Kan, E. C. 2002 Metal nanocrystal memories. I. device design and fabrication. IEEE Trans. Electron Dev. 49, 1606-1613. (doi: 10.1109/ TED.2002.802617) (Pubitemid 35017147)
    • (2002) IEEE Transactions on Electron Devices , vol.49 , Issue.9 , pp. 1606-1613
    • Liu, Z.1    Lee, C.2    Narayanan, V.3    Pei, G.4    Kan, E.C.5
  • 17
    • 33746311988 scopus 로고    scopus 로고
    • Memory effect of a polymer thin-film transistor with self-assembled gold nanoparticles in the gate dielectric
    • DOI 10.1109/TNANO.2006.876928, 1652855
    • Liu, Z. C, Xue, F. L., Su, Y., Lvov, Y. M & Varahramyan, K. 2006 Memory effect of a polymer thin-film transistor with self-assembled gold nanoparticles in the gate dielectric. IEEE Trans. Nanotechnol. 5, 379-384. (doi:10.1109/TNANO.2006.876928) (Pubitemid 44102128)
    • (2006) IEEE Transactions on Nanotechnology , vol.5 , Issue.4 , pp. 379-384
    • Liu, Z.1    Xue, F.2    Su, Y.3    Lvov, Y.M.4    Varahramyan, K.5
  • 18
    • 49049118429 scopus 로고    scopus 로고
    • Memory effects in hybrid silicon-metallic nanoparticle-organic thin film structures
    • doi:10.1016/j.orgel.2008.05.023
    • Mabrook, M. F., Pearson, C, Kolb, D., Zeze, D. A. & Petty, M. C. 2008 Memory effects in hybrid silicon-metallic nanoparticle-organic thin film structures. Org. Electron. 9, 816-820. (doi:10.1016/j.orgel.2008.05.023)
    • (2008) Org. Electron. , vol.9 , pp. 816-820
    • Mabrook, M.F.1    Pearson, C.2    Kolb, D.3    Zeze, D.A.4    Petty, M.C.5
  • 19
    • 79952692024 scopus 로고    scopus 로고
    • A 6 V embedded 90 nm silicon nanocrystal nonvolatile memory
    • doi:10.1109/IEDM.2003.1269353
    • Muralidhar, R. et al. 2003 A 6 V embedded 90 nm silicon nanocrystal nonvolatile memory. IEDM Tech. Digest 2003, 26.2.1-26.2.4. (doi:10.1109/IEDM. 2003.1269353)
    • (2003) IEDM Tech. Digest , vol.2003 , pp. 1-4
    • Muralidhar, R.1
  • 20
    • 0036928476 scopus 로고    scopus 로고
    • Electrical characterisation of LB films containing CdS nanoparticles
    • DOI 10.1016/S0928-4931(02)00209-6, PII S0928493102002096
    • Nabok, A. V., Iwantono, B., Hassan, A. K., Ray, A. K. & Wilkop, T. 2002 Electrical characterisation of LB films containing CdS nanoparticles. Mater. Sci. Eng. C 22, 355-358. (doi:10.1016/S0928-4931(02)00209-6) (Pubitemid 36048960)
    • (2002) Materials Science and Engineering C , vol.22 , Issue.2 , pp. 355-358
    • Nabok, A.V.1    Iwantono, B.2    Hassan, A.K.3    Ray, A.K.4    Wilkop, T.5
  • 21
  • 23
    • 2442495340 scopus 로고    scopus 로고
    • All-organic permanent memory transistor using an amorphous, spin-cast ferroelectric-like gate insulator
    • doi:10.1002/adma.200306187
    • Schroeder, R., Majewski, L. A. & Gell, M. 2004 All-organic permanent memory transistor using an amorphous, spin-cast ferroelectric-like gate insulator. Adv. Mater. 16, 633-636. (doi:10.1002/adma.200306187)
    • (2004) Adv. Mater. , vol.16 , pp. 633-636
    • Schroeder, R.1    Majewski, L.A.2    Gell, M.3
  • 25
    • 34249024926 scopus 로고    scopus 로고
    • Nickel nanoparticle deposition at room temperature for memory applications
    • DOI 10.1016/j.mee.2007.04.078, PII S0167931707004297, INFOS 2007
    • Verrelli, E., Tsoukalas, D., Giannakopoulos, K., Kouvatsos, D., Normand, P. & Ioannou, D. E. 2007 Nickle nanoparticle deposition at room temperature for memory applications. Microelectron. Eng. 84, 1994-1997. (doi:10.1016/j.mee. 2007.04.078) (Pubitemid 46783939)
    • (2007) Microelectronic Engineering , vol.84 , Issue.9-10 , pp. 1994-1997
    • Verrelli, E.1    Tsoukalas, D.2    Giannakopoulos, K.3    Kouvatsos, D.4    Normand, P.5    Ioannou, D.E.6


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.