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Volumn 830, Issue , 2005, Pages 13-24

Non Volatile Memory Technologies: Floating Gate Concept Evolution

Author keywords

[No Author keywords available]

Indexed keywords

COSTS; DATA STORAGE EQUIPMENT; DYNAMIC RANDOM ACCESS STORAGE; ELECTRON TUNNELING; MOS CAPACITORS; NAND CIRCUITS; SALES; SEMICONDUCTOR STORAGE; STATIC RANDOM ACCESS STORAGE; THRESHOLD VOLTAGE;

EID: 20344397429     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper
Times cited : (5)

References (17)
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    • Masuoka, F.1    Momodomi, M.2    Iwata, Y.3    Shirota, R.4
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    • (1999) Flash Memories
    • Selmi, L.1    Fiegna, C.2
  • 8
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  • 10
    • 0025577333 scopus 로고
    • Charge loss in EPROM due to ion generation and transport in interlevel dielectrics
    • Crisenza G., Ghidini G., Manzini S., Modelli A., Tosi M., "Charge loss in EPROM due to ion generation and transport in interlevel dielectrics", IEDM Tech. Dig., p. 107, 1990
    • (1990) IEDM Tech. Dig. , pp. 107
    • Crisenza, G.1    Ghidini, G.2    Manzini, S.3    Modelli, A.4    Tosi, M.5
  • 13
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    • A novel self-aligned shallow trench isolation cell for 90 nm 4 Gbit NAND Flash EEPROMs
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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.