A wafer-scale packaging structure with monolithic microwave integrated circuits and passives embedded in a silicon substrate for multichip modules for radio frequency applications

Journal of Micromechanics and Microengineering

Volumn 19, Issue 10, 2009, Pages

  Geng, Fei ^a,b   Ding, Xiao Yun ^a,b   Xu, Gao Wei ^a   Luo, Le ^a  

^a INSTITUTE OF GEOLOGY AND GEOPHYSICS   (China)

^b SHANGHAI INSTITUTE OF MICROSYSTEM AND INFORMATION TECHNOLOGY   (China)

Author keywords

[No Author keywords available]

Indexed keywords

BENZOCYCLOBUTENE; CHEMICAL-MECHANICAL PLANARIZATION; CMP PROCESS; ELECTRIC INTERCONNECTION; GOLD BUMPS; HIGH FREQUENCY; INTER-LAYER DIELECTRICS; INTERCONNECTION STRUCTURE; LOW RESISTIVITY SILICON; METAL SPUTTERING; METALIZED FILMS; PACKAGING STRUCTURE; PASSIVE COMPONENTS; RADIO FREQUENCY APPLICATIONS; RESISTANCE TESTING; RETURN LOSS; S PARAMETERS; SILICON SUBSTRATES; SIMULATION RESULT; STRIP LINE; TEST STRUCTURE; TESTING RESULTS; THERMAL RESISTANCE; THIN FILM RESISTORS; THREE-LAYER; TRANSITION STRUCTURES; TRANSMISSION CHARACTERISTICS; TRANSMISSION LINE; TWO LAYERS; WAFER LEVEL PACKAGING; WAFER-SCALE PACKAGING; WIREBONDING;

AUDIO FREQUENCY AMPLIFIERS; BANDPASS FILTERS; BUTENES; CHIP SCALE PACKAGES; ELECTRIC PROPERTIES; ELECTRONIC EQUIPMENT TESTING; GOLD; INTEGRATED CIRCUITS; LOW NOISE AMPLIFIERS; MECHANICAL PROPERTIES; MICROWAVE CIRCUITS; MICROWAVE INTEGRATED CIRCUITS; MICROWAVES; MULTICHIP MODULES; NANOTECHNOLOGY; PLASMA ETCHING; RADIO; RADIO WAVES; SCATTERING PARAMETERS; SEMICONDUCTING SILICON COMPOUNDS; SHEAR STRENGTH; SILICON WAFERS; SUBSTRATES; SWITCHING SYSTEMS;

MONOLITHIC MICROWAVE INTEGRATED CIRCUITS;

EID: 70350657145     PISSN: 09601317     EISSN: 13616439     Source Type: Journal    
DOI: 10.1088/0960-1317/19/10/105011     Document Type: Article

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