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IEEE MTT-S International Microwave Symposium Digest

Volumn , Issue , 2008, Pages 403-406

250 nm InP DHBT monolithic amplifiers with 4.8 dB gain at 324 GHz

(8) Hacker, Jonathan a Urteaga, Miguel a Mensa, Dino a Pierson, Richard a Jones, Mike b Griffith, Zach b Rodwell, Mark b Brar, B a

a TELEDYNE SCIENTIFIC COMPANY (United States)

b UNIVERSITY OF CALIFORNIA (United States)

Author keywords

Indium phosphide (InP) double heterojunction bipolar transistor (DHBT); Power amplifier; Submillimeter wave

Indexed keywords

BICMOS TECHNOLOGY; BIPOLAR TRANSISTORS; ELECTRIC LINES; HETEROJUNCTION BIPOLAR TRANSISTORS; INDIUM; INDIUM PHOSPHIDE; MICROWAVE AMPLIFIERS; MICROWAVE CIRCUITS; MICROWAVES; MONOLITHIC MICROWAVE INTEGRATED CIRCUITS; POWER AMPLIFIERS; POWER TRANSMISSION; PROTON IRRADIATION; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR DEVICE MODELS; SUBMILLIMETER WAVES; SUBSTRATES; TRANSISTORS; TRANSMISSION LINE THEORY; WAVE POWER;

APPLICATIONS.; BCB LAYERS; COMMON-BASE; COMPACT SIZES; DHBT TECHNOLOGIES; INP SUBSTRATES; INPUT POWERS; MICROSTRIP; MICROSTRIP TRANSMISSION LINES; MILLIMETER-WAVE; MMIC AMPLIFIERS; MONOLITHIC AMPLIFIERS; SATURATED OUTPUT POWERS; SEMICONDUCTOR SUBSTRATES; SMALL SIGNAL GAINS; SUB MILLIMETERS; SUBMILLIMETER-WAVE; THICK LAYERS; TRANSMISSION LINES;

ELECTROMAGNETIC WAVES;

EID: 57349182557 PISSN: 0149645X EISSN: None Source Type: Conference Proceeding
DOI: 10.1109/MWSYM.2008.4633188 Document Type: Conference Paper

Times cited : (40)

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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.