Improvement of high aspect ratio Si etching by optimized oxygen plasma irradiation inserted DRIE

Journal of Micromechanics and Microengineering

Volumn 19, Issue 9, 2009, Pages

  Ohara, Junji ^a   Takeuchi, Yukihiro ^a   Sato, Kazuo ^b  

^a DENSO CORPORATION   (Japan)

^b NAGOYA UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

BOSCH PROCESS; DEEP ETCHING; DEEP REACTIVE ION ETCHING; DRIE PROCESS; HIGH ASPECT RATIO; LIMITATION FACTORS; MASK EROSION; MASK MATERIALS; OXIDATION RATES; OXYGEN PLASMAS; PLASMA IRRADIATIONS; PROCESS TECHNIQUES; PROTECTION LAYERS; SOURCE CONDITIONS;

IRRADIATION; OXYGEN; PHOTORESISTS; PLASMA SOURCES; PRESSURE DROP; REACTIVE ION ETCHING; SILICON; SILICON COMPOUNDS; SILICON WAFERS;

ASPECT RATIO;

EID: 70350648758     PISSN: 09601317     EISSN: 13616439     Source Type: Journal    
DOI: 10.1088/0960-1317/19/9/095022     Document Type: Article

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