Accurate thickness determination of both thin SiO2 on Si and thin Si on SiO2 by angle-resolved X-ray photoelectron spectroscopy

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 38, Issue 7 B, 1999, Pages 4172-4179

  Katayama, Toshiharu ^a,b   Yamamoto, Hidekazu ^b   Ikeno, Masahiko ^b   Mashiko, Yoji ^b   Kawazu, Satoru ^c   Umeno, Masataka ^a  

^a OSAKA UNIVERSITY   (Japan)

^b MITSUBISHI ELECTRIC CORPORATION   (Japan)

^c KOCHI UNIVERSITY OF TECHNOLOGY   (Japan)

Author keywords

Angle resolved X ray photoelectron spectroscopy (AR XPS); Effective attenuation length; Plasmon loss; Si(100); Silicon oxide; SOI

Indexed keywords

ELLIPSOMETRY; SEMICONDUCTING SILICON; SILICA; SILICON ON INSULATOR TECHNOLOGY; THICKNESS MEASUREMENT; X RAY PHOTOELECTRON SPECTROSCOPY;

ANGLE RESOLVED X RAY PHOTOELECTRON SPECTROSCOPY; EFFECTIVE ATTENUATION LENGTH; PLASMON LOSS;

ULTRATHIN FILMS;

EID: 0033339915     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.38.4172     Document Type: Article

References (2)

1. C. S. Fadley: Prog. Solid State Chem. 11 (1976) 265.
2. J. M. Hill, D. G. Royce, C. S. Fadley, L. F. Wagner and F. J. Grunthaner: Chem. Phys. Lett. 44 (1976) 225.