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Volumn 123, Issue 12, 2003, Pages 541-547

New DRIE Process with Sidewall Protection Layer Formed by O2 Plasma Irradiation

Author keywords

Aspect ratio; DRIE; O2 plasma; SiO2 layer

Indexed keywords


EID: 79959408554     PISSN: 13418939     EISSN: 13475525     Source Type: Journal    
DOI: 10.1541/ieejsmas.123.541     Document Type: Article
Times cited : (8)

References (7)
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    • 85024455285 scopus 로고    scopus 로고
    • German patent DE4241045
    • F. Larmer, German patent DE4241045
    • Larmer, F.1
  • 4
    • 0032636883 scopus 로고    scopus 로고
    • BOSCH DEEP SILICON ETCHING: IMPROVING UNIFORMITY AND ETCH RATE FOR AVDANCED MEMS APPLICATIONS
    • Florida, USA
    • F. Larmer, A. Schilp, K. Funk, and M. Offenberg: “BOSCH DEEP SILICON ETCHING: IMPROVING UNIFORMITY AND ETCH RATE FOR AVDANCED MEMS APPLICATIONS”, Technical Digest MEMS'99, pp.211-216, Florida, USA
    • Technical Digest MEMS'99 , pp. 211-216
    • Larmer, F.1    Schilp, A.2    Funk, K.3    Offenberg, M.4
  • 5
    • 0032155363 scopus 로고    scopus 로고
    • Negative Ion Assisted Silicon Oxidation in Downstream of Microwave Plasma
    • T. Koromogawa, T. Fujii, A. Yamashita, Y. Horiike, and H. Shindo: “Negative Ion Assisted Silicon Oxidation in Downstream of Microwave Plasma”, Jpn. J. Appl. Phys., Vol.37, pp.5028-5032 (1998)
    • (1998) Jpn. J. Appl. Phys. , vol.37 , pp. 5028-5032
    • Koromogawa, T.1    Fujii, T.2    Yamashita, A.3    Horiike, Y.4    Shindo, H.5
  • 6
    • 0002373320 scopus 로고    scopus 로고
    • Low-Temperature and Low-Activation-Energy Process for the Gate Oxidation of Si Substrates
    • T. Ueno, A. Morioka, S. Chikamura, and Y. Iwasaki: “Low-Temperature and Low-Activation-Energy Process for the Gate Oxidation of Si Substrates”, Jpn. J. Appl. Phys., Vol.39, pp. L327-329 (2000)
    • (2000) Jpn. J. Appl. Phys. , vol.39
    • Ueno, T.1    Morioka, A.2    Chikamura, S.3    Iwasaki, Y.4
  • 7
    • 30244561205 scopus 로고
    • Ar+ bombardment of Si (100) in oxygen atmosphere: Room temperature oxide formation studied by x-ray photoelectron spectroscopy
    • A. Terrasi, C. Coluzza, and G. Margaritondo: “Ar+ bombardment of Si (100) in oxygen atmosphere: Room temperature oxide formation studied by x-ray photoelectron spectroscopy”, J. Appl. Phys., 78, pp.3820-3823 (1995)
    • (1995) J. Appl. Phys. , vol.78 , pp. 3820-3823
    • Terrasi, A.1    Coluzza, C.2    Margaritondo, G.3


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.