Suppression of notching by lowering the bias frequency in electron cyclotron resonance plasma with a divergent magnetic field

Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films

Volumn 16, Issue 3, 1998, Pages 1588-1593

  Morioka, H ^a   Matsunaga, D ^a   Yagi, H ^a  

^a FUJITSU LABORATORIES LTD   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

BIAS FREQUENCY; CD CONTROL; CONTINUOUS MODE; CRITICAL DIMENSION CONTROL; ELECTRON CYCLOTRON RESONANCE PLASMA; NOTCH DEPTH; PATTERN SPACING; PATTERN STRUCTURE; POLYMER DEPOSITION; PROXIMITY EFFECTS; PULSED PLASMA; RF BIAS; SIDE ETCHING; SIDEWALL PROTECTION;

CYCLOTRONS; ELECTRON CYCLOTRON RESONANCE; MAGNETIC FIELDS; PLASMA SOURCES; RESONANCE;

PRESSURE EFFECTS;

EID: 0342577773     PISSN: 07342101     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.581192     Document Type: Article

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