Epitaxy of carbon-rich silicon with MBE

Materials Science and Engineering B: Solid-State Materials for Advanced Technology

Volumn 89, Issue 1-3, 2002, Pages 241-245

  Laveant P ^a   Gerth, G ^a   Werner, P ^a   Gosele U ^a  

^a MAX PLANCK INSTITUTE OF MICROSTRUCTURE PHYSICS   (Germany)

Author keywords

Carbon; Epitaxy; Growth; MBE; Silicon

Indexed keywords

AGGLOMERATION; CARBON; CHEMICAL VAPOR DEPOSITION; HIGH ENERGY ELECTRON DIFFRACTION; MOLECULAR BEAM EPITAXY; SECONDARY ION MASS SPECTROMETRY; SEMICONDUCTOR DOPING;

TRANSIENT ENHANCED DIFFUSION;

SEMICONDUCTING SILICON;

EID: 0037074821     PISSN: 09215107     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0921-5107(01)00794-2     Document Type: Article

References (16)