Crystal-field split levels of Nd3+ ions in GaN measured by luminescence spectroscopy

Journal of Applied Physics

Volumn 105, Issue 5, 2009, Pages

  Metcalfe, Grace D ^a   Readinger, Eric D ^a   Shen, Hongen ^a   Woodward, Nathaniel T ^b   Dierolf, Volkmar ^b   Wraback, Michael ^a  

^a U S ARMY RESEARCH LABORATORY   (United States)

^b LEHIGH UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC SPECTROSCOPY; CONFOCAL MICROSCOPY; CRYSTAL GROWTH; EXCITED STATES; GALLIUM ALLOYS; GALLIUM NITRIDE; IONS; LIGHT EMISSION; MOLECULAR BEAMS; MOLECULAR DYNAMICS; MOLECULAR SPECTROSCOPY; NEODYMIUM; PHOTOLUMINESCENCE; SEMICONDUCTING GALLIUM; SEMICONDUCTING INDIUM COMPOUNDS; SPECTRUM ANALYSIS;

BAND-GAP EXCITATIONS; COMBINED EXCITATION-EMISSION SPECTROSCOPIES; LUMINESCENCE SPECTROSCOPIES; LUMINESCENCE SPECTRUM; OPTIMAL EXCITATIONS; PHOTOLUMINESCENCE EXCITATION SPECTRUM; PHOTOLUMINESCENCE SPECTRUM; PLASMA-ASSISTED MOLECULAR BEAM EPITAXIES; SITE-SELECTIVE SPECTROSCOPIES; STARK ENERGIES;

EMISSION SPECTROSCOPY;

EID: 62549123710     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3082500     Document Type: Article

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