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Volumn 35, Issue 7, 2002, Pages 609-614
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The GaN yellow luminescence centre observed using optoelectronic modulation spectroscopy
a
b
CRHEA CNRS
(France)
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Author keywords
[No Author keywords available]
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Indexed keywords
ELECTRIC CURRENTS;
ELECTRON ENERGY LEVELS;
FABRY-PEROT INTERFEROMETERS;
HIGH ELECTRON MOBILITY TRANSISTORS;
LIGHT MODULATION;
LUMINESCENCE;
METALLORGANIC VAPOR PHASE EPITAXY;
OSCILLATIONS;
PHONONS;
SEMICONDUCTING ALUMINUM COMPOUNDS;
SEMICONDUCTOR DEVICE STRUCTURES;
SPECTROSCOPY;
ANTI PHASE RESPONSE;
CHANNEL CURRENT;
DEEP ENERGY STATES;
FABRY-PEROT OSCILLATIONS;
FRANK-CONDON ENERGY;
OPTOELECTRONIC MODULATION SPECTROSCOPY;
REPLICA STRUCTURE;
STOKES SHIFT;
SUB BAND GAP RESPONSES;
VALENCE BAND;
GALLIUM NITRIDE;
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EID: 0037035277
PISSN: 00223727
EISSN: None
Source Type: Journal
DOI: 10.1088/0022-3727/35/7/307 Document Type: Article |
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Times cited : (6)
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References (8)
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