Photoluminescence properties of Eu-implanted AlxGa 1-xN (0≤x≤1)

Physica Status Solidi C: Conferences

Volumn 2, Issue 7, 2005, Pages 2805-2808

  Fujiwara, Tetsuya ^a   Wakahara, Akihiro ^a   Nakanishi, Yasuo ^a   Yoshida, Akira ^a   Oshima, Takeshi ^b   Kamiya, Toshihiro ^b  

^a TOYOHASHI UNIVERSITY OF TECHNOLOGY   (Japan)

^b JAPAN ATOMIC ENERGY AGENCY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ENERGY TRANSFER; EUROPIUM; ION IMPLANTATION; PHOTOLUMINESCENCE; SEMICONDUCTOR DOPING;

ENERGY TRANSFER EFFICIENCY; INTENSITY ENHANCEMENT EFFECT; PHOTOLUMINESCENCE PROPERTIES; TRANSITION PROBABILITY;

ALUMINUM COMPOUNDS;

EID: 27344431706     PISSN: 16101634     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1002/pssc.200461431     Document Type: Conference Paper

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