메뉴 건너뛰기




Volumn 27, Issue 4, 1998, Pages 246-254

Excitation mechanisms of multiple Er3+ sites in Er-Implanted GaN

Author keywords

Er implantation; GaN; Photoluminescence

Indexed keywords


EID: 0000727067     PISSN: 03615235     EISSN: None     Source Type: Journal    
DOI: 10.1007/s11664-998-0395-6     Document Type: Article
Times cited : (23)

References (19)
  • 2
    • 36448999619 scopus 로고
    • P.N. Favennec, H. L'Haridon, M. Salvi, D. Moutonnet and Y. Le Guillou, Electron. Lett. 25, 718 (1989); A.J. Neuhalfen and B.W. Wessels, Appl. Phys. Lett. 60, 2657 (1992); J.M. Zavada and D. Zhang, Solid-State Electron. 38, 1285 (1995).
    • (1992) Appl. Phys. Lett. , vol.60 , pp. 2657
    • Neuhalfen, A.J.1    Wessels, B.W.2
  • 3
    • 0029343470 scopus 로고
    • P.N. Favennec, H. L'Haridon, M. Salvi, D. Moutonnet and Y. Le Guillou, Electron. Lett. 25, 718 (1989); A.J. Neuhalfen and B.W. Wessels, Appl. Phys. Lett. 60, 2657 (1992); J.M. Zavada and D. Zhang, Solid-State Electron. 38, 1285 (1995).
    • (1995) Solid-State Electron. , vol.38 , pp. 1285
    • Zavada, J.M.1    Zhang, D.2
  • 5
    • 0000997278 scopus 로고    scopus 로고
    • R.A. Hogg, K. Takahei and A. Taguchi, J. Appl. Phys. 79, 8682 (1996); J.H. Shin, G.N. van den Hoven and A. Polman, Appl. Phys. Lett. 67, 377 (1995).
    • (1996) J. Appl. Phys. , vol.79 , pp. 8682
    • Hogg, R.A.1    Takahei, K.2    Taguchi, A.3


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.