Characteristics of polycrystalline zno-based electrolyte-solution-gate field-effect transistors fabricated on glass substrates

Applied Physics Express

Volumn 2, Issue 8, 2009, Pages

  Koike, Kazuto ^a   Hashimoto, Mitsuhiro ^a   Tsuji, Kumiho ^a   Seiwa, Yasuaki ^a   Ogata, Ken Ichi ^a   Sasa, Shigehiko ^a   Inoue, Masataka ^a   Yano, Mitsuaki ^a  

^a OSAKA INSTITUTE OF TECHNOLOGY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

AMINO GROUP; CONSTANT RATE; CURRENT FLOWS; GATE ELECTRODES; GATE FIELD; GLASS SUBSTRATES; PH SENSITIVITY; POLYCRYSTALLINE FILM; POLYCRYSTALLINE ZNO; ZNO;

AMINATION; AMINES; ELECTROLYSIS; ELECTROLYTES; GLASS; ION SENSITIVE FIELD EFFECT TRANSISTORS; MESFET DEVICES; PROTON TRANSFER; REFRACTORY METAL COMPOUNDS; SEMICONDUCTING ZINC COMPOUNDS; ZINC OXIDE;

FIELD EFFECT TRANSISTORS;

EID: 68949130984     PISSN: 18820778     EISSN: 18820786     Source Type: Journal    
DOI: 10.1143/APEX.2.087001     Document Type: Article

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