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Volumn 47, Issue 4 PART 2, 2008, Pages 2845-2847
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Performance and stability of ZnO/ZnMgO hetero-metal-insulator-semiconductor field-effect transistors
a
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Author keywords
Al 2O3; Hetero MIS FET; HfO2; Molecular beam epitaxy; ZnO ZnMgO
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Indexed keywords
ADMINISTRATIVE DATA PROCESSING;
ALUMINUM;
CRYSTAL GROWTH;
DIELECTRIC MATERIALS;
ELECTRIC CONDUCTIVITY;
FIELD EFFECT TRANSISTORS;
GATES (TRANSISTOR);
HAFNIUM COMPOUNDS;
HETEROJUNCTIONS;
MESFET DEVICES;
METAL INSULATOR BOUNDARIES;
MIS DEVICES;
MOLECULAR BEAMS;
MOLECULAR DYNAMICS;
SEMICONDUCTOR INSULATOR BOUNDARIES;
SEMICONDUCTOR MATERIALS;
SWITCHING CIRCUITS;
TRANSISTORS;
ZINC OXIDE;
AL 2O3;
HETERO-MIS FET;
HFO2;
MOLECULAR BEAM EPITAXY;
ZNO/ZNMGO;
GATE DIELECTRICS;
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EID: 54249145160
PISSN: 00214922
EISSN: 13474065
Source Type: Journal
DOI: 10.1143/JJAP.47.2845 Document Type: Article |
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Times cited : (16)
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References (11)
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