Carrier relaxation and modulation response of 1.3-μm InAs-GaAs quantum dot lasers

Journal of Lightwave Technology

Volumn 27, Issue 23, 2009, Pages 5442-5450

  Tong, Cun Zhu ^a   Xu, Da Wei ^a   Yoon, Soon Fat ^a  

^a NANYANG TECHNOLOGICAL UNIVERSITY   (Singapore)

Author keywords

Carrier relaxation; Modulation response; Quantum dots (QDs); Semiconductor laser

Indexed keywords

3 DB BANDWIDTH; BANDWIDTH LIMITATION; CARRIER CONFINEMENTS; CARRIER DYNAMICS; CARRIER RELAXATION; CARRIER RELAXATION DYNAMICS; DIFFERENT EFFECTS; ENERGY LEVEL; GAAS; GAAS BARRIERS; INAS; K-FACTOR; MODULATION RESPONSE; P-DOPING; P-TYPE MODULATION DOPING; QD LASERS; QUANTUM DOT LASERS; QUANTUM DOTS (QDS); RATE-EQUATION MODELS; RELAXATION DYNAMICS;

BANDWIDTH; GALLIUM ALLOYS; INDIUM ARSENIDE; LASERS; MODULATION; OPTICAL WAVEGUIDES; RELAXATION PROCESSES; SEMICONDUCTING GALLIUM; SEMICONDUCTING INDIUM; SEMICONDUCTOR LASERS; TUNNELING (EXCAVATION); WIND TUNNELS;

SEMICONDUCTOR QUANTUM DOTS;

EID: 70350513525     PISSN: 07338724     EISSN: None     Source Type: Journal    
DOI: 10.1109/JLT.2009.2030141     Document Type: Article

References (34)

1. I. R. Sellers, H. Y. Liu, K. M. Groom, D. T. Childs, D. Robbins, T. J. Badcock, M. Hopkinson, D. J. Mowbray, and M. S. Skolnick, "1.3 μm InAs-GaAs multilayer quantum-dot laser with extremely low roomtemperature threshold current density," Electron. Lett., vol. 40, no. 22, pp. 1412-1413, Oct. 2004.
2. A. R. Kovsh, N. A. Maleev, A. E. Zhukov, S. S. Mikhrin, A. P. Vasil'ev, Yu.M. Shernyakov,M. V.Maximov, D. A. Livshits, V. M. Ustinov, Zh. I. Alferov, N. N. Ledentsov, and D. Bimberg, "InAs-InGaAs-GaAs quantum dot lasers of 1.3 μm range with high (88%) differential efficiency," Electron. Lett., vol. 38, no. 6, pp. 1104-1106, Jun. 2002.
3. Z. Mi, P. Bhattacharya, and S. Fathpour, "High-speed 1.3 μm tunnel injection quantum-dot lasers," Appl. Phys. Lett., vol. 86, pp. 153109-1153109-3, 2005.
4. S. Fathpour, Z. Mi, and P. Bhattachaya, "High-speed quantum dot lasers," J. Phys. D: Appl. Phys., vol. 38, pp. 2103-2111, 2005.
5. S. M. Kim, Y. Wang, M. Keever, and J. S. Harris, "High-frequency modulation characteristics of 1.3-μm InGaAs quantum dot lasers," IEEE Photon. Technol. Lett., vol. 16, no. 2, pp. 377-379, Feb. 2004.
6. O. B. Shchekin and D. G. Deppe, "The role of p-type doping and the density of states on the modulation response of quantum dot lasers," Appl. Phys. Lett., vol. 80, pp. 2758-2760, 2002.
7. D. G. Deppe, H. Huang, and O. B. Shchekin, "Modulation characteristics of quantum-dot lasers: The influence of p-type doping and electronic density of states on obtaining high speed," IEEE J. Quantum Electron., vol. 38, no. 12, pp. 1587-1593, Dec. 2002.
8. D. G. Deppe and H. Huang, "Fermi's golden rule, nonequilibrium electron capture from the wetting layer, and the modulation response in p-doped quantum-dot lasers," IEEE J. Quantum Electron., vol. 42, no. 3, pp. 324-330, Mar. 2006.
9. D. G. Deppe and D. L. Huffaker, "Quantum dimensionality, entropy, and the modulation response of quantum dot lasers," Appl. Phys. Lett. vol. 77, pp. 3325-3327, 2000.
10. M. Ishida, N. Hatori, T. Akiyama, K. Otsubo, Y. Nakata, H. Ebe, M. Sugawara, and Y. Arakawa, "Photon lifetime dependence of modulation efficiency and K-factor in 1.3 μm self-assembled InAs-GaAs quantum-dot lasers: Impact of capture time and maximum modal gain on modulation bandwidth," Appl. Phys. Lett., vol. 85, pp. 4145-4147, 2004.
11. M. Ishida, N. Hatori, T. Akiyama, K. Otsubo, Y. Nakata, H. Ebe, M. Sugawara, and Y. Arakawa, "High-speed modulation characteristics of 1.3 μm quantum-dot lasers: Influence of effective capture time on the maximum bandwidth," presented at the Int. Conf. Indium Phoshide Related Mater., Japan, 2004.
12. A. V. Uskov, Y. Boucher, J. Le Bihan, and J. McInerney, "Theory of a self-assembled quantum-dot semiconductor laser with Auger carrier capture: Quantum efficiency and nonlinear gain," Appl. Phys. Lett. vol. 73, pp. 1499-1501, 1998.
13. E. Malić, K. J. Ahn, M. J. P. Bormann, P. Hövel, E. Schöll, A. Knorr, M. Kuntz, and D. Bimberg, "Theory of relaxation oscillations in semiconductor quantum dot lasers," Appl. Phys. Lett., vol. 89, pp. 101107-1101107-3, 2006.
14. A. Fiore and A. Markus, "Differential gain and gain compression in quantum-dot lasers," IEEE J. Quantum Electron., vol. 43, no. 3, pp. 287-294, Apr. 2007.
15. P. Bhattacharya, D. Klotzkin, O. Qasaimeh, W. Zhou, S. Krishna, and D. Zhu, "High-speed modulation and switching characteristics of In(Ga As self-organized quantum dot lasers," IEEE J. Sel. Top. Quantum Electron., vol. 6, no. 3, pp. 426-438, May/Jun. 2000.
16. P. Bhattacharya, S. Ghosh, S. Pradhan, J. Singh, Z. K. Wu, J. Urayama, K. Kim, and T. B. Norris, "Carrier dynamics and high-speed modulation properties of tunnel injection InGaAs-GaAs quantum-dot lasers," IEEE J. Quantum Electron., vol. 39, no. 8, pp. 952962, Aug. 2003.
17. R. R. Alexander, D. T. D. Childs, H. Agarwal, K. M. Groom, H. Y. Liu, M. Hopkinson, R. A. Hogg, M. Ishida, T. Yamamoto, M. Sugawara, Y. Arakawa, T. J. Badcock, R. J. Royce, and D. J. Mowbray, "Systematic study of the effects of modulation p-doping on 1.3-μm quantum-dot lasers," IEEE J. Quantum Electron., vol. 43, no. 12, pp. 1129-1139, Dec. 2007.
18. L. Zhang, T. F. Boggess, D. G. Deppe, D. L. Huffaker, O. B. Shchekin, and C. Cao, "Dynamic response of 1.3-μm-wavelength InGaAs-GaAs quantum dots," Appl. Phys. Lett., vol. 76, pp. 1222-1224, 2000.
19. T. F. Boggess, L. Zhang, D. G. Deppe, D. L. Huffaker, and C. Cao, "Spectral engineering of carrier dynamics in In(Ga)As self-assembled quantum dots," Appl. Phys. Lett., vol. 78, pp. 276-278, 2001.
20. M. Sugawara, Semiconductor and Semimetals. New York: Academic, 1999.
21. x As multiple-quantum-well structure," Phys. Rev. B, vol. 38, pp. 6160-6165, 1988.
22. E. W. Bogaart, J. E. M. Haverkort, T. Mano, T. van Lippen, R. Nötzel, and J. H. Wolter, "Role of the continuum background for carrier relaxation in InAs quantum dots," Phys. Rev. B, vol. 72, pp. 195301-1195301-7, 2005.
23. T. R. Nielsen, P. Gartner, and F. Jahnke, "Many-body theory of carrier capture and relaxation in semiconductor quantum-dot lasers," Phys. Rev. B, vol. 69, pp. 235314-1235314-13, 2004.
24. M. De Giorgi, C. Lingk, G. von Plessen, J. Feldmann, S. De Rinaldis, A. Passaseo, M. De Vittorio, and R. Cingolani, "Capture and thermal re-emission of carriers in long-wavelength InGaAs-GaAs quantum dots," Appl. Phys. Lett., vol. 79, pp. 3968-3970, 2001.
25. A. V. Uskov, F. Adler, H. Schweizer, and M. H. Pilkuhn, "Auger carrier relaxation in self-assembled quantum dots by collisions with two dimensional carriers," J. Appl. Phys., vol. 81, pp. 7895-7899, 1997.
26. C. Z. Tong, S. F. Yoon, C. Y. Ngo, C. Y. Liu, and W. K. Loke, "Rate equations for 1.3 μm dots-under-a-well and dots-in-a-well self-assembled InAs-GaAs quantum dot lasers," IEEE J. Quantum Electron., vol. 42, no. 11, pp. 1175-1183, Nov. 2006.
27. Y. Toda, O. Moriwaki, M. Nishioka, and Y. Arakawa, "Efficient carrier relaxation mechanism in InGaAs-GaAs self-assembled quantum dots based on the existence of continuum states," Phys. Rev. Lett., vol. 82, pp. 4114-4117, 1999.
28. A. Fiore, P. Borri, W. Langbein, J. M. Hvan, U. Oesterle, R. Houdré, R. P. Stanley, and M. llegems, "Time-resolved optical characterization of InAs-InGaAs quantum dots emitting at 1.3 μm," Appl. Phys. Lett. vol. 76, pp. 34303-3432, 2000.
29. M. Grundmann, O. Stier, S. Bognar, C. Ribbat, F. Heinrichsdorff, and D. Bimberg, "Optical properties of self-organized quantum dots: Modeling and experiments," Phys. Stat. Sol. (a), vol. 178, pp. 255-262, 2000.
30. R. R. Alexander, D. Childs, H. Agarwal, K. M. Groom, H. Y. Liu, M. Hopkinson, and R. A. Hogg, "Zero and controllable linewidth enhancement factor in p-doped 1.3 μm quantum dot lasers," Jpn. J. Appl. Phys. vol. 46, pp. 2421-2423, 2007.
31. R. Krebs, F. K. Lopf, S. Rennon, J. P. Reithmaier, and A. Forchel, "High frequency characteristics of InAsGa-InAs quantum dot distributed feedback lasers emitting at 1.3 μm," Electron. Lett., vol. 37, no. 10, pp. 1223-1225, Sep. 2001.
32. J. Siegert, S. M. Kevičius, and Q. X. Zhao, "Carrier dynamics in modulation-doped InAs-GaAs quantum dots," Phys. Rev. B, vol. 72, pp. 085316-1085316-7, 2005.
33. K. W. Sun, A. Kechiantz, B. C. Lee, and C. P. Lee, "Ultrafast carrier capture and relaxation in modulation-doped InAs quantum dots," Appl. Phys. Lett., vol. 88, pp. 163117-1163117-3, 2006.
34. A. A. Dikshit, V. Vangapally, and J. M. Pikal, "Carrier lifetime and recombination in 1.3 μm p-doped InAs quantum-dot lasers," Proc. SPIE, vol. 6133, pp. 61330H-161330H-12, 2006.