Investigation of low-resistance metal contacts on p-tyne GaN using the linear and circular transmission line method

Physica Status Solidi (A) Applied Research

Volumn 183, Issue 1, 2001, Pages 169-175

  Weimar, A ^a   Lell, A ^a   Bruderl G ^a   Bader, S ^a   Harle V ^a  

^a OSRAM OPTO SEMICONDUCTORS GMBH   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; ELECTRIC RESISTANCE; ELECTRON BEAMS; ENERGY GAP; EVAPORATION; FERMI LEVEL; LIGHT EMITTING DIODES; NICKEL; PALLADIUM; PHOTOLITHOGRAPHY; PLATINUM; THERMAL EFFECTS;

CIRCULAR TRANSMISSION LINE METHOD; ELECTRON BEAM EVAPORATION; LINEAR TRANSMISSION LINE METHOD; LOW RESISTANCE METAL CONTACT; TEMPERATURE DEPENDENCE; THERMAL EVAPORATION;

GALLIUM NITRIDE;

EID: 0035123604     PISSN: 00318965     EISSN: None     Source Type: Journal    
DOI: 10.1002/1521-396X(200101)183:1<169::AID-PSSA169>3.0.CO;2-D     Document Type: Article

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