A freestanding GaN/HfO2 membrane grown by molecular beam epitaxy for GaNSi hybrid MEMS

IEEE Journal on Selected Topics in Quantum Electronics

Volumn 15, Issue 5, 2009, Pages 1332-1337

  Sameshima, Hidehisa ^a   Wakui, Masashi ^a   Hu, Fang Ren ^a   Hane, Kazuhiro ^a  

^a TOHOKU UNIVERSITY   (Japan)

Author keywords

Ga compounds; Hafnium compounds; Microelectromechanical devices

Indexed keywords

GA COMPOUNDS; GAN CRYSTALS; HYBRID MEMS; HYBRID STRUCTURE; MICRO ELECTRO MECHANICAL SYSTEM; OPTICAL MEMS; SI SUBSTRATES;

COMPOSITE MICROMECHANICS; CRYSTAL GROWTH; GALLIUM NITRIDE; GRAIN BOUNDARIES; HAFNIUM; HAFNIUM COMPOUNDS; LIGHT; LIGHT SOURCES; MEMBRANES; MEMS; MICROELECTROMECHANICAL DEVICES; MOLECULAR BEAM EPITAXY; MOLECULAR BEAMS; SEMICONDUCTING GALLIUM; SEMICONDUCTOR QUANTUM WIRES; SILICON; SUBSTRATES;

GALLIUM ALLOYS;

EID: 70350158592     PISSN: 1077260X     EISSN: None     Source Type: Journal    
DOI: 10.1109/JSTQE.2009.2017031     Document Type: Conference Paper

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