GaN-Si-MEMS structure fabricated from nano-column GaN quantum well crystal grown on Si substrate

Physica Status Solidi (C) Current Topics in Solid State Physics

Volumn 5, Issue 6, 2008, Pages 1941-1943

  Hu, F R ^a   Ito, R ^a   Zhao, Y ^a   Hane, K ^a  

^a TOHOKU UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

BASIC RESEARCH; BEAM-STEERING; COMB ACTUATOR; EMISSION WAVELENGTH; GROWTH OF GAN; INGAN/GAN QUANTUM WELL; LIGHT BEAM; MEMS-STRUCTURE; MICROELECTROMECHANICAL SYSTEMS; MICROSTAGE; NANOCOLUMN; PHOTOLUMINESCENCE MEASUREMENTS; QUANTUM WELL; SI SUBSTRATES; SI(111) SUBSTRATE;

COMPOSITE MICROMECHANICS; CRYSTAL STRUCTURE; CRYSTALS; GALLIUM NITRIDE; LIGHT SOURCES; MICROELECTROMECHANICAL DEVICES; SEMICONDUCTOR GROWTH; SEMICONDUCTOR QUANTUM WELLS; SILICON; SUBSTRATES;

GALLIUM ALLOYS;

EID: 70350196800     PISSN: 18626351     EISSN: 16101642     Source Type: Journal    
DOI: 10.1002/pssc.200778497     Document Type: Conference Paper

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