Green LED development in polar and non-polar growth orientation

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 7422, Issue , 2009, Pages

  Wetzel, Christian ^a   Zhu, Mingwei ^a   Li, Yufeng ^a   Hou, Wenting ^a   Zhao, Liang ^a   Zhao, Wei ^a   You, Shi ^a   Stark, Christoph ^a   Xia, Yong ^a   Dibiccari, Michael ^a   Detchprohm, Theeradetch ^a  

^a NONE

Author keywords

Efficiency; GaInN GaN; Green gap; Green LED; Homoepitaxy; MOVPE; Non polar; Threading dislocation

Indexed keywords

GAINN-GAN; GREEN GAP; GREEN LED; HOMOEPITAXY; MOVPE; NON-POLAR; THREADING DISLOCATION;

CRYSTAL GROWTH; CRYSTAL ORIENTATION; DISLOCATIONS (CRYSTALS); ENERGY EFFICIENCY; GALLIUM ALLOYS; GALLIUM NITRIDE; LIGHTING; METALLORGANIC VAPOR PHASE EPITAXY; ORGANIC LIGHT EMITTING DIODES (OLED); ORGANOMETALLICS; SEMICONDUCTING GALLIUM; SEMICONDUCTOR QUANTUM WELLS;

LIGHT EMITTING DIODES;

EID: 70349917549     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.829513     Document Type: Conference Paper

References (33)

1. Isamu Akasaki and Hiroshi Amano, "Crystal Growth and Conductivity Control of Group III Nitride Semiconductors and Their Application to Short Wavelength Light Emitters," Jpn. J. Appl. Phys. Pt 1 36(9a), 5393-5408 (1997)
2. Isamu Akasaki and Hiroshi Amano, "Breakthroughs in Improving Crystal Quality of GaN and Invention of the p-n Junction Blue-Light-Emitting Diode," Jpn. J. Appl. Phys. 45(12), 9001-9010 (2006)
3. G. Chen, M. Craven, A. Kim, A. Munkholm, S. Watanabe, M. Camras, W. Götz, and F. Steranka, "Performance of high-power III-nitride light emitting diodes," phys. stat. sol. (a) 205(5), 1086-1092 (2008)
4. P. Schlotter, R. Schmidt, and J. Schneider, "Luminescence conversion of blue light emitting diodes," J. Appl. Phys. 64, 417 (1997)
5. U.S. Department of Energy, Solid-State Lighting Program, http://www.netl.-doe.gov/ssl.
6. C. Wetzel, T. Takeuchi, S. Yamaguchi, H. Katoh, H. Amano, and I. Akasaki, "Optical Band Gap in Ga1-xInxN (0
7. J. Wu, W. Walukiewicz, K. M. Yu, J. W. Ager III, E. E. Haller, Hai Lu, and William J. Schaff, "Small Bandgap Bowing in InxGa1-xN Alloys", Appl. Phys. Lett. 80, 4741 (2002).
8. C. Wetzel, S. Kamiyama, H. Amano, I. Akasaki, "Optical Absorption in Polarized Ga1-xInxN/GaN Quantum Wells," Jpn. J. Appl. Phys. Part 1, 41(1), 11-14 (2002)
9. C. Wetzel, T. Salagaj, T. Detchprohm, P. Li, and J.S. Nelson, "GaInN/GaN Growth Optimization for High Power Green Light Emitting Diodes," Appl. Phys. Lett. 85(6), 866-868 (2004)
10. M. Zhu, T. Detchprohm, S. You, Y. Wang, Y. Xia, W. Zhao, Y. Li, J. Senawiratne, Z. Zhang, and C. Wetzel, "Vdefect Analysis in Green and Deep Green Light Emitting Diode Structures," Phys. Stat. Sol., 5(6), 1777-1779, (2008)
11. A. D. Hanser, L. Liu, E. A. Preble, D. Tsvetkov, M. Tutor, N. M. Williams, K. Evans, Y. Zhou, D. Wang, C. Ahyi, C. C. Tin, J. Williams, M. Park, D. F. Storm, D. S. Katzer, S. C. Binari, J. A. Roussos, and J. A. Mittereder, "An Overview of Gallium Nitride Substrate Materials Developments for Optoelectronic and Microelectronic Applications", CS MANTECH Conference, Vancouver, British Columbia, Canada, 2006.
12. M. Zhu, Y. Xia, W. Zhao, Y. Li, J. Senawiratne, T. Detchprohm, and C. Wetzel, "Structural Characterization of Homoepitaxial Blue GaInN/GaN Light-Emitting Diodes by Transmission Electron Microscopy," J. Electron. Mater. 37(5), 641-645 (2008)
13. Theeradetch Detchprohm, Mingwei Zhu, Yufeng Li, Yong Xia, Christian Wetzel, Edward A. Preble, Lianghong Liu, Tanya Paskova, and Drew Hanser, "Green Light Emitting Diodes on a-Plane GaN Bulk Substrates," Appl. Phys. Lett. 92, 24119 (2008)
14. Mingwei Zhu, Theeradetch Detchprohm, Shi You, Wei Zhao, Wenting Hou, Yufeng Li, Yong Xia, Liang Zhao, Stephanie Tomasulo, Tanya Paskova, Edward A. Preble, Drew Hanser, Christian Wetzel, "Blue-Green GaInN/GaN Light Emitting Diode on Non-Polar m-Plane Bulk GaN", Electronic Materials Conference, Pennsylvania State University, June 24 - 26, 2009.
15. Mingwei Zhu, Theeradetch Detchprohm, Yong Xia, Wei Zhao, Yufeng Li, Jayantha Senawiratne, Shi You, Lianghong Liu, Edward A. Preble, Drew Hanser, Christian Wetzel, "Structural Analysis in Low-V-defect Blue and Green GaInN/GaN Light Emitting Diodes," in Nitrides and Related Bulk Materials, edited by R. Kniep, F.J. DiSalvo, R. Riedel, Z. Fisk, and Y. Sugahara (Mater. Res. Soc. Symp. Proc. Volume 1040E, Warrendale, PA, 2008), 1040-Q03-02.
16. T. Detchprohm, M. Zhu, Y. Xia, Y. Li, W. Zhao, J. Senawiratne, and C. Wetzel, "Improved Performance of GaInN Based Deep Green Light Emitting Diodes through V-Defect Reduction," Phys. Stat. Sol. (c) 5(6), 2207-2209, (2008)
17. C. Wetzel, Yufeng Li, J. Senawiratne, Mingwei Zhu, Yong Xia, S. Tomasulo, P.D. Persans, Lianghong Liu, D. Hanser, and T. Detchprohm, " Characterization of GaInN/GaN layers for green emitting laser diodes," J. Cryst. Growth 311, 2942-2947 (2009)
18. A. Bykhovski, B. Gelmont, and M. Shur, "The influence of the strain-induced electric field on the charge distribution in GaN-AlN-GaN structure," J. Appl. Phys. 74, 6734 (1993)
19. F. Bernardini, V. Fiorentini, and D. Vanderbilt, ''Spontaneous polarization and piezoelectric constants of III-V nitrides," Phys. Rev. B 56, R10024 (1997)
20. C. Wetzel, T. Takeuchi, H. Amano, and I. Akasaki, "Piezoelectric Franz-Keldysh Effect in Strained GaInN/GaN Heterostructures," J. Appl. Phys. 85(7), 3786-3791 (1999)
21. Christian Wetzel and Theeradetch Detchprohm, "RPI starts to extinguish the green gap," Compound Semiconductor, 15(1), 21-23, 2009.
22. C. Wetzel, T. Takeuchi, H. Amano, and I. Akasaki, "Electric Field Strength, Polarization Dipole, and Multi- Interface Bandoffset in GaInN/GaN Quantum Well Structures," Phys. Rev. B 61, 2159-2163 (2000)
23. C. Wetzel, M. Kasumi, T. Detchprohm, T. Takeuchi, H. Amano, and I. Akasaki, "Discrete Stark-Like Ladder in Piezoelectric GaInN/GaN Quantum Wells," Phys. Stat. Sol. (b) 216, 399-403 (1999)
24. C. Wetzel, T. Takeuchi, H. Amano, and I. Akasaki, "Quantized States in Ga1-xInxN/GaN Heterostructures and the Model of Polarized Homogeneous Quantum Wells," Phys. Rev. B 62(20), R13302-5 (2000)
25. T. Takeuchi, H. Amano, and I. Akasaki, "Theoretical Study of Orientation Dependenence of Piezoelectric Effects in Wurtzite Strained GaInN/GaN Heterostructures and Quantum Wells", Jpn. J. Appl. Phys., Part 1 39, 413 (2000)
26. C. Wetzel, M. Zhu, J. Senawiratne, T. Detchprohm, P.D. Persans, L. Liu, E. A. Preble, and D. Hanser, "Light Emitting Diode Development on Polar and Non-Polar GaN Substrates," J. Cryst. Growth 310, 3987-3991 (2008)
27. C. Wetzel, T. Takeuchi, H. Amano, and I. Akasaki, "Electric Field Strength, Polarization Dipole, and Multi- Interface Bandoffset in GaInN/GaN Quantum Well Structures," Phys. Rev. B 61, 2159-2163 (2000)
28. M. Zhu, Y. Xia, W. Zhao, Y. Li, J. Senawiratne, T. Detchprohm, and C. Wetzel, "Structural Characterization of Homoepitaxial Blue GaInN/GaN Light-Emitting Diodes by Transmission Electron Microscopy," J. Electron. Mater. 37(5), 641-645 (2008)
29. C. Wetzel, Rump Session, The Second International Conference on Nitride Semiconductors - ICNS 97, 27-31 October 1997, Tokushima, Japan.
30. e.g., poster presentations by Hewlett Packard Research Labs, Yokohama, Japan, presented at The Second International Conference on Nitride Semiconductors - ICNS 97, 27-31 October 1997, Tokushima, Japan.
31. A. Chakraborty, S. Keller, C. Meier, B.A. Haskell, S. Keller, P. Waltereit, S.P. DenBaars, S. Nakamura, J.S. Speck, U.K. Mishra, "Properties of nonpolar a-plane InGaN/GaN multiple quantum wells grown on lateral epitaxially overgrown a-plane GaN," Appl. Phys. Lett. 86 (2005) 031901.
32. T. Detchprohm, M. Zhu, Y. Li, Y. Xia, L. Liu, D. Hanser, and C. Wetzel, "Growth and Characterization of Green GaInN-Based Light Emitting Diodes on Free-Standing Non-Polar GaN Templates," J. Cryst. Growth 311, 2937-2941 (2009)
33. Y. Tsuda, M. Ohta, P.O. Vaccaro, S. Ito, S. Hirukawa, Y. Kawaguchi, Y. Fujishiro, Y. Takahira, Y. Ueta, T. Takakura, T. Yuasa, "Blue Laser Diodes Fabricated on m-Plane GaN Substrates," Appl. Phys. Express 1 (2008) 011104.