Growth and characterization of green GaInN-based light emitting diodes on free-standing non-polar GaN templates

Journal of Crystal Growth

Volumn 311, Issue 10, 2009, Pages 2937-2941

  Detchprohm, T ^a   Zhu, M ^a   Li, Y ^a   Xia, Y ^a   Liu, L ^b   Hanser, D ^b   Wetzel, C ^a  

^a Research Rensselaer Polytechnic Institute   (United States)

^b KYMA TECHNOLOGIES INC   (United States)

Author keywords

A3. Metalorganic chemical vapor deposition; B1. Nitrides; B1. Semiconducting III V materials

Indexed keywords

A-PLANE; A3. METALORGANIC CHEMICAL VAPOR DEPOSITION; B1. NITRIDES; B1. SEMICONDUCTING III-V MATERIALS; EMISSION PEAKS; HOMOEPITAXIAL GROWTH; HYDRIDE VAPOR PHASE EPITAXY; M-PLANE; NON-POLAR; NON-POLAR GAN; QUANTUM WELL;

EPITAXIAL GROWTH; GALLIUM ALLOYS; GALLIUM NITRIDE; LIGHT EMISSION; METALLORGANIC CHEMICAL VAPOR DEPOSITION; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTOR GROWTH; VAPORS;

LIGHT EMITTING DIODES;

EID: 65749117562     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2009.01.060     Document Type: Article

References (13)

1. Schmidt M.C., Kim K.C., Sato H., Fellows N., Masui H., Nakamura S., DenBaars S.P., and Speck J.S. Jpn. J. Appl. Phys. 46 (2007) L126
2. Okamoto K., Ohta H., Chichibu S.F., Ichihara J., and Takasu H. Jpn. J. Appl. Phys. 46 (2007) L187
3. Schmidt M.C., Kim K.C., Farrell R.M., Feezell D.F., Cohen D.A., Saito M., Fujito K., Speck J.S., DenBaars S.P., and Nakamura S. Jpn. J. Appl. Phys. 46 (2007) L190
4. Okamoto K., Tanaka T., Kubota M., and Ohta H. Jpn. J. Appl. Phys. 46 (2007) L820
5. Kubota M., Okamoto K., Tanaka T., and Ohta H. Appl. Phys. Express 1 (2008) 011102
6. Tsuda Y., Ohta M., Vaccaro P.O., Ito S., Hirukawa S., Kawaguchi Y., Fujishiro Y., Takahira Y., Ueta Y., Takakura T., and Yuasa T. Appl. Phys. Express 1 (2008) 011104
7. Detchprohm T., Zhu M., Xia Y., Li Y., Zhao W., Senawiratne J., and Wetzel C. Phys. Status Solidi (c) 5 (2008) 2207
8. Detchprohm T., Zhu M., Li Y., Xia Y., Wetzel C., Preble E.A., Liu L., Paskova T., and Hanser D. Appl. Phys. Lett. 92 (2008) 241109
9. Darakchieva V., Paskova T., Schubert M., Arwin H., Paskov P.P., Monemar B., Hommel D., Heuken M., Off J., Scholz F., Haskell B.A., Fini P.T., Speck J.S., and Nakamura S. Phys. Rev. B 75 (2007) 195217
10. Tsuda M., Furukawa H., Honshio A., Iwaya M., Kamiyama S., Amano H., and Akasaki I. Jpn. J. Appl. Phys. 45 (2006) 2509
11. T.L. Tansley, E.M. Goldys, In: J. Edgar, S. Strite, I. Akasaki, H. Amano, C. Wetzel, (Eds.), Properties, Processing and Applications of Gallium Nitride and Related Semiconductors, INSPEC, IEE, London, 1999, pp.123-128.
12. Chakraborty A., Keller S., Meier C., Haskell B.A., Keller S., Waltereit P., DenBaars S.P., Nakamura S., Speck J.S., and Mishra U.K. Appl. Phys. Lett. 86 (2005) 031901
13. Wetzel C., Salagaj T., Detchprohm T., Li P., and Nelson J.S. Appl. Phys. Lett. 85 (2004) 866