Structural analysis in low-V-defect blue and green GaInN/GaN light emitting diodes

Materials Research Society Symposium Proceedings

Volumn 1040, Issue , 2008, Pages 196-201

  Mingwei, Zhu ^a,b   Detchprohm, Theeradetch ^a,b   Yong, Xia ^a,b   Wei, Zhao ^a,b   Yufeng, Li ^a,b   Senawiratne, Jayantha ^a,b   Shi, You ^a,b   Lianghong, Liu ^c   Preble, Edward A ^c   Hanser, Drew ^c   Wetzel, Christian ^a,b  

^a RENSSELAER POLYTECHNIC INSTITUTE   (United States)

^b Research Rensselaer Polytechnic Institute   (United States)

^c KYMA TECHNOLOGIES INC   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVE REGIONS; BLUE LEDS; DISLOCATION PAIRS; GREEN LEDS; GROWTH DIRECTIONS; HIGH DENSITY; HOMOEPITAXIAL GROWTH; LIGHT OUTPUT POWER; LOW DENSITY; MISFIT DISLOCATIONS; ORDER OF MAGNITUDE; QUANTUM WELL; SAPPHIRE SUBSTRATES; STRAIN RELIEF; STRUCTURAL DEFECT; THREADING DISLOCATION; TILT ANGLE; V-DEFECTS;

CORUNDUM; EPITAXIAL GROWTH; GALLIUM ALLOYS; GALLIUM NITRIDE; LIGHT EMITTING DIODES; SAPPHIRE; SEMICONDUCTING GALLIUM; SEMICONDUCTOR QUANTUM WELLS; STRUCTURAL ANALYSIS;

DEFECTS;

EID: 70350328753     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

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