An Overview of Gallium Nitride Substrate Materials Developments for Optoelectronic and Microelectronic Applications

2006 International Conference on Compound Semiconductor Manufacturing Technology

Volumn , Issue , 2006, Pages 67-69

  Hanser, A D ^a   Liu, L ^a   Preble, E A ^a   Tsvetkov, D ^a   Tutor, M ^a   Williams, N M ^a   Evans, K ^a   Zhou, Y ^b   Wang, D ^b   Ahyi, C ^b   Tin, C C ^b   Williams, J ^b   Park, M ^b   Storm, D F ^c   Katzer, D S ^c   Binari, S C ^c   Roussos, J A ^c   Mittereder, J A ^c  

^a KYMA TECHNOLOGIES INC   (United States)

^b AUBURN UNIVERSITY   (United States)

^c NAVAL RESEARCH LABORATORY   (United States)

Author keywords

Bulk substrates; FET; Gan; HVPE; Schottky diode

Indexed keywords

BULK SUBSTRATES; FET; GAN; HVPE; SCHOTTKY DIODES;

FABRICATION; GALLIUM NITRIDE; MATERIALS PROPERTIES; MICROELECTRONIC PROCESSING; MICROELECTRONICS; SCHOTTKY BARRIER DIODES; SEMICONDUCTOR DEVICE MANUFACTURE;

SUBSTRATES;

EID: 84887451475     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (4)

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2. M. Ikeda, T. Mizuno, M. Takeya, S. Goto, S. Ikeda, T. Fujimoto, Y. Ohfuji, and T. Hashizu, phys. stat. sol. (c) 1 1461 (2004).
3. S. K. Mathis, A. E. Romanov, L. F. Chen, G. E. Beltz, W. Pompe, and J. S. Speck, phys. stat. sol. (a) 179 125 (2000).
4. D.F. Storm et al. Electron. Lett. 40, 1226 (2004).