Improved low-k dielectric properties using he/h2 plasma for resist removal

Advanced Metallization Conference (AMC)

Volumn , Issue , 2009, Pages 593-598

  Urbanowicz, Adam Michal ^a,b   Shamiryan, Denis ^a   Marsik, Premysl ^c   Travaly, Youssef ^a   Jonas, Alain ^d   Verdonck, Patrick ^a   Vanstreels, Kris ^a   Ferchichi, Abdelkarim ^a   De Roest, David ^e   Sprey, Hessel ^e   Matsushita, Kiyohiro ^f   Kaneko, Shinya ^f   Tsuji, Naoto ^f   Luo, Shijian ^g   Escorcia, Orlando ^g   Berry, Ivan ^g   Waldfried, Carlo ^g   De Gendt, Stefan ^a,b   Baklanov, Mikhail ^a  

^a IMEC   (Belgium)

^b UNIVERSITY OF LEUVEN   (Belgium)

^c MASARYK UNIVERSITY   (Czech Republic)

^d UNIVERSITÉ CATHOLIQUE DE LOUVAIN   (Belgium)

^e ASM BELGIUM   (Belgium)

^f ASM Japan   (Japan)

^g AXCELIS TECHNOLOGIES   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL METHOD; DEPTH PROFILE; DIELECTRIC CONSTANTS; ELEVATED TEMPERATURE; HYDROPHILISATION; K-VALUE; LOW K DIELECTRICS; LOW-K FILMS; LOW-K MATERIALS; MECHANICAL STRENGTH; MODIFIED LAYER; PLASMA EXPOSURE; PLASMA MODIFICATIONS; POROGENS; RESIDUE REMOVAL; RESIST REMOVAL; SMALL REDUCTION; ULTRA-VIOLET;

CERAMIC CAPACITORS; CHEMICAL MODIFICATION; DIELECTRIC PROPERTIES; DIGITAL SIGNAL PROCESSORS; METAL RECOVERY; METALLIZING; OPTICAL PROPERTIES; PLASMAS;

PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION;

EID: 70349904597     PISSN: 15401766     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

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