Activated He:H2 strip of photoresist over porous low-k materials

Solid State Phenomena

Volumn 103-104, Issue , 2005, Pages 341-344

  Han, Q ^a   White, B ^b   Berry, I L ^a   Waldfried, C ^a   Escorcia, O ^a  

^a Axcelis Technologies Incorporated   (United States)

^b SEMATECH   (United States)

Author keywords

He:H2; Low damage; Low k materials; Resist strip

Indexed keywords

EID: 33748983879     PISSN: 10120394     EISSN: 16629779     Source Type: Book Series    
DOI: 10.4028/www.scientific.net/SSP.103-104.341     Document Type: Conference Paper

References (4)

1. US Patent # 6,630,406, Granted October 7, 2003.
2. C. Waldfried, et al., Electrochemical and Solid State Letters, volume 6, issue 12, pp. G137-139, 2003.
3. Q. Han et al, Proceedings of the SEMICON China 2005 Technical Symposium, Shanghai, China, 2005.
4. E. Sparks et al, Proceedings of the Sematech Wafer Clean & Surface Prep Conference 2004, Austin, TX.