Surface potential measurement of carbon nanotube field-effect transistors using kelvin probe force microscopy

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 46, Issue 4 B, 2007, Pages 2496-2500

  Umesaka, Takeo ^a   Ohnaka, Hirofumi ^a   Ohno, Yutaka ^a,b   Kishimoto, Shigeru ^a   Maezawa, Koichi ^a   Mizutani, Takashi ^a  

^a NAGOYA UNIVERSITY   (Japan)

^b JAPAN SCIENCE AND TECHNOLOGY AGENCY   (Japan)

Author keywords

Carbon nanotube field effect transistors; Hysteresis; KFM; Surface potential

Indexed keywords

CARBON NANOTUBES; CURRENT VOLTAGE CHARACTERISTICS; HYSTERESIS; SURFACE MEASUREMENT; SURFACE POTENTIAL;

CARBON NANOTUBE FIELD EFFECT TRANSISTORS; CNT CHANNEL; KELVIN PROBE FORCE MICROSCOPY; POTENTIAL IMAGE;

FIELD EFFECT TRANSISTORS;

EID: 34547856295     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.1143/JJAP.46.2496     Document Type: Article

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