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Volumn 38, Issue 11, 2009, Pages 2308-2313

Erratum: In situ measurements of thermal and electrical effects of strain in flip-chip silicon dies using synchrotron radiation X-rays (Journal of Electronic Materials (2009) 38:11 (2308-2313) DOI: 10.1007/s11664-009-0934-9));In situ measurements of thermal and electrical effects of strain in flip-chip silicon dies using synchrotron radiation x-rays

(7) Wu, Albert T a Tsai, Chun Yang a Kao, Chin Li b Shih, Meng Kai b Lai, Yi Shao b Lee, Hsin Yi c Ku, Ching Shun c

a NATIONAL CENTRAL UNIVERSITY (Taiwan)

b ADVANCED SEMICONDUCTOR ENGINEERING INC (Taiwan)

c NATIONAL SYNCHROTRON RADIATION RESEARCH CENTER (Taiwan)

Author keywords

Electromigration; Flip chip; Measurement; Silicon die; Strain; Synchrotron radiation x rays; Thermal effect

Indexed keywords

DIES; ELECTROMIGRATION; FLIP CHIP DEVICES; MEASUREMENT; RADIATION EFFECTS; SILICON; STRAIN; SYNCHROTRONS; THERMAL EFFECTS; THERMAL EXPANSION; X RAYS;

ELECTRICAL EFFECTS; FLIP CHIP; IN-SITU MEASUREMENT; PRECISE MEASUREMENTS; SILICON DIE; STRAIN DISTRIBUTIONS; SYNCHROTRON RADIATION X-RAYS; SYNCHROTRON X RAYS;

SYNCHROTRON RADIATION;

EID: 70349871410 PISSN: 03615235 EISSN: None Source Type: Journal
DOI: 10.1007/s11664-009-1004-z Document Type: Erratum

Times cited : (9)

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