Geometric linewidth and the impact of thermal processing on the stress regimes induced by electroless copper metallization for Si integrated circuit interconnect technology

Journal of Applied Physics

Volumn 96, Issue 12, 2004, Pages 7596-7602

  McNally, P J ^a   Kanatharana, J ^a   Toh, B H W ^b   McNeill, D W ^b   Danilewsky, A N ^c   Tuomi, T ^d   Knuuttila, L ^d   Riikonen, J ^d   Toivonen, J ^d   Simon, R ^e  

^a DUBLIN CITY UNIVERSITY   (Ireland)

^b QUEEN'S UNIVERSITY BELFAST   (United Kingdom)

^c UNIVERSITY OF FREIBURG   (Germany)

^d AALTO UNIVERSITY   (Finland)

^e KARLSRUHE INSTITUTE OF TECHNOLOGY   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; ATOMIC FORCE MICROSCOPY; COPPER; FINITE ELEMENT METHOD; INTEGRATED CIRCUITS; STRAIN; THERMAL EFFECTS; THERMAL STRESS;

CIRCUIT INTERCONNECTS; MECHANICAL STRAIN; STRESS REGIMES; THERMAL PROCESSING;

METALLIZING;

EID: 19944365181     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1811780     Document Type: Article

References (26)

1. J. R. Lloyd, J. Clemens, and R. Snede, Microelectron. Reliab. 39, 1595 (1999).
2. P. Singer, Semicond. Int. 1988, 91.
3. Copper-Fundamental Mechanisms for Microelectronic Applications, edited by S. P. Murarka, I. V. Verner, and R. J. Gutmann (Wiley, New York, 2000).
4. Multilevel Interconnect Technology, edited by G. K. Rao (McGraw-Hill, New York, 1993).
5. P. R. Besser, in Stress Induced Phenomena in Metallization, edited by Oliver Kraft, Edward Arzt, Cynthia A. Volkent Paul S. Ho, and Hidekozu Orbay AIP Conf. Proc. No. 491, (AIP, Melville, NY, 1999), p. 229.
6. J. Kasthurirangan, Y. Du, P. Ho, C. Capasso, M. Gall, D. Jawarani, R. Hernandez, and H. Kawasaki, Stress Induced Phenomena in Metallization, Ref. 5, p. 304.
7. T. D. Sullivan, in Ref. 5, p. 39.
8. J. Kanatharana et al., J. Phys. D 36, A60 (2003).
9. J. Kanatharana et al., Microelectron. Eng. 65, 209 (2003).
10. Y. Shacham-Diamand, V. Dubin, and M. Angyal, Thin Solid Films 262, 93 (1995).
11. T. Tuomi, K. Naukkarinen, and P. Rabe, Phys. Status Solidi A 25, 93 (1974).
12. High Resolution X-ray Diffractometry and Topography, edited by D. K. Bowen and B. K. Tanner (Taylor & Francis, London, 1998), pp. 189-200.
13. X-Ray and Neutron Dynamical Diffraction: Theory and Applications, edited by A. Authier, S. Lagomarsino, and B. K. Tanner (Plenum, New York, 1996).
14. E. S. Meieran and I. A. Blech, J. Appl. Phys. 36, 3162 (1965).
15. I. A. Blech and E. S. Meieran, J. Appl. Phys. 38, 2913 (1967).
16. E. S. Meieran and I. A. Blech, J. Appl. Phys. 43, 265 (1972).
17. E. S. Meieran and I. A. Blech, Phys. Status Solidi 29, 653 (1968).
18. P. J. McNallyer al., J. Mater. Sci.: Mater. Electron. 10, 351 (1999).
19. I. De Wolf, J. Raman Spectrosc. 30, 877 (1999).
20. http://www.quickfield.com
21. Handbook for Hybrid Microelectronics Materials, edited by J. A. King (Artech, Boston, 1988).
22. M. Yamada, K. Yoshie, S. Yamaguchi., H. Niwa, M. Hosaka., T. Kouno, Y. Mizushima, N. Misawa, K. Kakuta, T. Suzuki., R. Shinohara., M. Ikeda, H. Kudo, and A. Tsukune, Advanced Metallization Conference in 1998 (AMC 1998), edited by G. S. Sandhuet al., MRS Symposia Proceedings No. 14 (Materials Research Society, Pittsburgh, 1998), p. 19.
23. L. Graham, T. Ritzdorf, D. Clarke, and R. Thakur, Semicond. Fabtech 11, 270 (1999).
24. S. L. Lagrange, S. H. Brongersma, M. Judelewicz, A. Saerens, I. Vervoort, E. Richard, R. Palmans, and K. Maex, Microelectron. Eng. 50, 449 (2000).
25. S. H. Brongersma, E. Richard, I. Vervoort, H. Bender, W. Vandervorst, D. Lagrange, G. Beyer, and K. Maex, J. Appl. Phys. 86, 3642 (1999).
26. S. Riedel, J. Röber, S. E. Shulz, and T. Gessner, Microelectron. Eng. 37-38, 151 (1997).