The influence of substrate temperature and Al mobility on the microstructural evolution of magnetron sputtered ternary Ti-Al-N thin films

Journal of Applied Physics

Volumn 106, Issue 6, 2009, Pages

  Beckers, M ^a,b   Hoglund C ^b   Baehtz, C ^a   Martins, R M S ^a   Persson, P O A ^b   Hultman, L ^b   Moller W ^a  

^a INSTITUTE OF ION BEAM PHYSICS AND MATERIALS RESEARCH   (Germany)

^b LINKÖPING UNIVERSITY   (Sweden)

Author keywords

[No Author keywords available]

Indexed keywords

ADATOM MOBILITIES; ALN; BASAL PLANES; COMPETITIVE GROWTH; DEPOSITION PARAMETERS; DOMAIN GROWTH; EX SITU; IN-SITU; PARALLEL ORIENTATION; REACTIVE CO-SPUTTERING; ROOM TEMPERATURE; STACKING SEQUENCE; STACKINGS; SUBSTRATE INTERFACE; SUBSTRATE SURFACE; SUBSTRATE TEMPERATURE; TI-AL-N; X RAY PHOTOEMISSION SPECTROSCOPY;

ALUMINUM; EMISSION SPECTROSCOPY; EPITAXIAL GROWTH; LUMINESCENCE OF ORGANIC SOLIDS; NITRIDES; PHOTOEMISSION; RUTHERFORD BACKSCATTERING SPECTROSCOPY; SCATTERING; STOICHIOMETRY; TIN; TITANIUM NITRIDE; TRANSMISSION ELECTRON MICROSCOPY;

SUBSTRATES;

EID: 70349823227     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3208065     Document Type: Article

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