Structural and strain relaxation study of epitaxially grown nanothick Nd2O3/Si(111) heterostructure

4th IEEE International Conference on Nano/Micro Engineered and Molecular Systems, NEMS 2009

Volumn , Issue , 2009, Pages 436-440

  Wang, Jinxing ^a,c   Laha, Apurba ^a   Fissel, Andreas ^a   Schwendt, Dominik ^a   Dargis, Rytis ^a   Watahiki, Tatsuro ^b   Shayduk, Roman ^b   Braun, Wolfgang ^b   Liu, Tianmo ^c   Osten, H Jörg ^a  

^a LEIBNIZ UNIVERSITY HANNOVER   (Germany)

^b Paul Drude Institutfur Festkorperelektronik ^*  (Germany)

^c CHONGQING UNIVERSITY   (China)

Author keywords

GIXD; Molecular beam epitaxy; Nd2O3; Strain relaxation

Indexed keywords

BIXBYITE STRUCTURE; COMPRESSIVE STRAIN; CRYSTALLINITIES; DIFFRACTION METHODS; EPITAXIAL RELATIONSHIPS; EPITAXIALLY GROWN; EX SITU; GIXD; HETEROSTRUCTURES; HIGH RESOLUTION; IN-PLANE; IN-PLANE DIRECTION; IN-PLANE LATTICES; IN-SITU; ND2O3; OUT-OF-PLANE; OUT-OF-PLANE DIRECTION; SHARP INTERFACE; SI (1 1 1); SI SUBSTRATES; SINGLE ORIENTATIONS; UNIT CELLS;

CRYSTAL GROWTH; DIFFRACTION; LATTICE MISMATCH; MOLECULAR BEAM EPITAXY; MOLECULAR BEAMS; NEODYMIUM; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR QUANTUM WIRES; SILICON; STRAIN CONTROL; STRAIN RELAXATION; SUBSTRATES; X RAY DIFFRACTION;

TENSILE STRAIN;

EID: 70349659194     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/NEMS.2009.5068613     Document Type: Conference Paper

References (17)

1. 3 for Si," Journal ofApplied Physics, vol. 89, pp. 3920-3927, 2007.
2. G. D. Wilk, R. M. Wallace, and J. M. Anthony, "High-k gate dielectrics: Current status and materials properties considerations," Journal of Applied Physics, vol. 89, pp. 5243-5275,2001.
3. P. Zaumseil and T. Schroeder, "A complex x-ray characterization of epitaxially grown high-K gate dielectrics," Journal of physics D: Applied Physics, vol. 38, pp. AI79-AI83, 2005.
4. A. Fissel, Z. Elassar, O. Kirfel, E. Bugiel, M. Czernohorsky, and H. J. Osten, "Interface formation during molecular beam epitaxial growth of neodymium oxide on silicon," Journal of applied Physics, vol. 99, pp. 074105.1-6,2006.
5. 3," ECS Transactions, vol. 1, pp. 331-340, 2006.
6. A. Laha, A. Fissel, E. Bugiel, and H. 1. Osten, "Epitaxial multicomponent rare earth oxide for high-K application," Thin Solid Films, vol. 515,pp.6512-6517,2007.
7. K. J. Hubbard and D. G. Schlom, "Thermodynamic stability of binary oxides in contact with silicon," Journal of Materials Research, vol. 11, pp. 2757-2776, 1996.
8. A. A. Dakhel, "Mott-hopping processes in neodymium oxide thin films prepared on Si(100) substrates," Crystal Research and Technology, vol. 39,pp.404-407,2004.
9. H. H. Stadelmaier and G. Hofer, "Phasen mit Diamant-Unterstruktur in ternaren Beryllium-Legierungen," Monatshefte für Chemie, vol. 89, pp. 45-48, 1967.
10. 3 thick gate dielectric for silicon," Physica Status Solidi (A), vol. 201, pp. 745-755, 2004.
11. H. J. Osten, E. Bugiel, M. Czernohorsky, Z. Elassar, O. Kirfel and A. Fissel, "Molecular Beam Epitaxy of Rare-Earth Oxides," Rare earth oxide thin films, vol. 106, pp. 101-114,2007.
12. 3 on Si(lll) by quasistatic C-V method," Applied physics letters, vol. 93, pp. 083509.1-3,2008.
13. 3 thin films on Si(OOI)," Applied Physics Letters, vol. 88, pp. 152905.1-3,2006.
14. A. Fissel, D. Kühne, E. Bugiel, and H. J. Osten, "Cooperative solidvapor- phase epitaxy: An approach for fabrication of single-crystalline insulator/Si/insulator nanostructures," Applied Physics Letters, vol. 88, pp. 153105.1-3,2006.
15. 3 on silicon," Thin Solid Films, vol. 515, pp. 6479-6483,2007.
16. 3(Al,Si)/GaAs: An x-ray scattering study," Applied Physics LettersT, vol. 68, pp. 1528-1530, 1996.
17. 4 surface passivation," Applied Physics Letters, vol. 88, pp. 102106.1-3, 2006.