Electroluminescence with high and stable quantum efficiency and low threshold voltage from anodically oxidized thin porous silicon diode

Journal of Applied Physics

Volumn 88, Issue 7, 2000, Pages 4319-4324

  Gelloz, Bernard ^a   Koshida, Nobuyoshi ^a  

^a TOKYO UNIVERSITY OF AGRICULTURE AND TECHNOLOGY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0000635576     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1290458     Document Type: Article

References (17)

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