Plasmon-enhanced emission from optically-doped MOS light sources

Optics Express

Volumn 17, Issue 1, 2009, Pages 185-192

  Hryciw, Aaron C ^a   Jun, Young Chul ^a   Brongersma, Mark L ^a  

^a STANFORD UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

LIGHT EMISSION; LIGHT SOURCES; MOS DEVICES; OPTICAL PROPERTIES; PLASMONS; SILICON; SILVER; SPONTANEOUS EMISSION; SURFACE PLASMON RESONANCE;

DIELECTRIC LAYER; ENHANCED EMISSION; LIGHT-EMITTING STRUCTURES; METAL DIELECTRIC SEMICONDUCTORS; MODULATION SPEED; SPONTANEOUS EMISSION RATES; THIN OXIDE LAYERS; WAVELENGTH RANGES;

WAVEGUIDES;

OXIDE; SILICON; SILICON DIOXIDE; SILVER;

ARTICLE; INSTRUMENTATION; KINETICS; LIGHT; METHODOLOGY; MICROCHIP ANALYSIS; NANOTECHNOLOGY; OPTICS; SEMICONDUCTOR; SURFACE PLASMON RESONANCE;

KINETICS; LIGHT; MICROCHIP ANALYTICAL PROCEDURES; NANOTECHNOLOGY; OPTICS AND PHOTONICS; OXIDES; SEMICONDUCTORS; SILICON; SILICON DIOXIDE; SILVER; SURFACE PLASMON RESONANCE;

EID: 58449090113     PISSN: None     EISSN: 10944087     Source Type: Journal    
DOI: 10.1364/OE.17.000185     Document Type: Article

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