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Chemical Vapor Deposition

Volumn 15, Issue 7-9, 2009, Pages 217-220

The effect of the H2 flow rate on the deposition of TiO 2 film produced by inductively coupled plasma-assisted CVD

(5) Jang, Dong Su a Kwon, Soon Ho a Lee, Hee Yong a Yang, Won Kyun b Lee, Jung Joong a

a Seoul National University (South Korea)

b Kunsan National University (South Korea)

Author keywords

Crystal structure; Hydrogen; ICP CVD; TiCl4; Titanium dioxide

Indexed keywords

EXTERNAL HEATING; ICP-CVD; RUTILE TIO; SUBSTRATE TEMPERATURE; TICL4; TIO;

CHEMICAL VAPOR DEPOSITION; CRYSTAL STRUCTURE; DEPOSITION RATES; EMISSION SPECTROSCOPY; FLOW RATE; HYDROGEN; INDUCTIVELY COUPLED PLASMA; OPTICAL EMISSION SPECTROSCOPY; OXIDE MINERALS; PLASMA DENSITY; PLASMA DIAGNOSTICS; TITANIUM; TITANIUM DIOXIDE; TITANIUM OXIDES;

PLASMA DEPOSITION;

EID: 70349618939 PISSN: 09481907 EISSN: 15213862 Source Type: Journal
DOI: 10.1002/cvde.200806765 Document Type: Article

Times cited : (4)

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