Epitaxial growth of phosphorus doped diamond on {111} substrate

Diamond and Related Materials

Volumn 11, Issue 3-6, 2002, Pages 328-331

  Casanova, N ^a   Tajani, A ^a   Gheeraert, E ^a   Bustarret, E ^a   Garrido, J A ^b   Nebel, C E ^b   Stutzmann, M ^b  

^a LABORATOIRE DE CRISTALLOGRAPHIE   (France)

^b WALTER SCHOTTKY INSTITUT   (Germany)

Author keywords

Characterisation IR; Diamond; Growth; n Type doping

Indexed keywords

ABSORPTION SPECTROSCOPY; ACTIVATION ENERGY; CHEMICAL VAPOR DEPOSITION; CRYSTALS; DOPING (ADDITIVES); ELECTRIC CONDUCTIVITY; ELECTRON ENERGY LEVELS; ELECTRON TRANSITIONS; EPITAXIAL GROWTH; INFRARED SPECTROSCOPY; PHOSPHORUS; PHOTOCONDUCTIVITY; SUBSTRATES; SURFACE CHEMISTRY;

INFRARED ABSORPTION SPECTROSCOPY;

DIAMOND FILMS;

DIAMOND;

EID: 0036508106     PISSN: 09259635     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0925-9635(02)00012-2     Document Type: Article

References (6)