Conventional n-type doping in diamond: State of the art and recent progress

Semiconductor Science and Technology

Volumn 20, Issue 2, 2005, Pages

  Nesladek, Milos ^a,b  

^a CEA SACLAY   (France)

^b HASSELT UNIVERSITY   (Belgium)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER MOBILITY; CHEMICAL VAPOR DEPOSITION; DOPING (ADDITIVES); ELECTRIC POTENTIAL; ELECTRONIC EQUIPMENT; HIGH TEMPERATURE EFFECTS; NANOSTRUCTURED MATERIALS; SEMICONDUCTOR MATERIALS;

DIAMOND LAYERS; DOPANT; ELECTRONIC DEVICES; SEMICONDUCTING MATERIALS;

DIAMONDS;

EID: 13644281997     PISSN: 02681242     EISSN: None     Source Type: Journal    
DOI: 10.1088/0268-1242/20/2/R01     Document Type: Review

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