Control of threshold voltage of enhancement-mode AlxGa 1-xN/GaN junction heterostructure field-effect transistors using p-GaN gate contact

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 46, Issue 1, 2007, Pages 115-118

  Fujii, Takahiro ^a   Tsuyukuchi, Norio ^a   Hirose, Yoshikazu ^a   Iwaya, Motoaki ^a   Kamiyama, Satoshi ^a   Amano, Hiroshi ^a   Akasaki, Isamu ^a  

^a MEIJO UNIVERSITY   (Japan)

Author keywords

AlxGa1 xN GaN; AlN molar fraction; Enhancement mode; HFETs; JHFET; P type GaN gate

Indexed keywords

COMPUTER SIMULATION; FIELD EFFECT TRANSISTORS; GALLIUM NITRIDE; HETEROJUNCTIONS;

ALN MOLAR FRACTION; ENHANCEMENT MODES; JHFET; P-TYPE GAN GATE;

THRESHOLD VOLTAGE;

EID: 34547868930     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.1143/JJAP.46.115     Document Type: Article

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