Controllable growth of dielectric/semiconductor integrated films

Chinese Science Bulletin

Volumn 54, Issue 15, 2009, Pages 2681-2687

  Li, Yang Rong ^a   Zhu, Jun ^a   Luo, Wen Bo ^a   Liu, Xing Zhao ^a   Zhang, Wan Li ^a  

^a UNIVERSITY OF ELECTRONIC SCIENCE AND TECHNOLOGY OF CHINA   (China)

Author keywords

Dielectrics; Integration; Pulsed laser deposition; Semiconductor; Thin film

Indexed keywords

EID: 70349410724     PISSN: 10016538     EISSN: 18619541     Source Type: Journal    
DOI: 10.1007/s11434-009-0218-z     Document Type: Article

References (19)

1. Ahn C H, Rabe K M, Triscone J M. Ferroelectricity at the nanoscale: local polarization in oxide thin films and heterostructures. Science, 2004, 303: 488-491
2. Wu Y R, Singh J. Polar heterostructure for multifunction devices: theoretical Studies. IEEE Transactions On Electron Devices, 2005, 52: 284-293
3. Edge L F, Schlom D G, Sivasubramani P, et al. Electrical characterization of amorphous lanthanum aluminate thin films grown by molecular-beam deposition on silicon. Appl Phys Lett, 2006, 88: 112907
4. Qiu X X, Liu H W, Fang F, et al. Interfacial properties of high-k dielectric CaZrOx films deposited by pulsed laser deposition. Appl Phys Lett 2006, 88(18): 182907
5. Goncharova L V, Starodub D G, Garfunkel E, et al. Interface structure and thermal stability of epitaxial SrTiO3 thin films on Si (001). J Appl Phys 2006, 100(01): 014912
6. Vaithyanathan V, Lettieri J, Tian W, et al. C-axis oriented epitaxial Ba-TiO3 films on (001) Si. J Appl Phys, 2006, 100: 024108
7. Liang Y, Kulik J, Eschrich T C, et al. Hetero-epitaxy of perovskite oxides on GaAs(001) by molecular beam epitaxy Appl Phys Lett, 2004, 85: 1217-1219
8. Mbenkum B N, Ashkenov N, Schubert M, et al. Temperature-dependent dielectric and electro-optic properties of a ZnO-BaTiO3-ZnO heterostucture grown by pulsed-laser-deposition. Appl Phys Lett, 2005, 86: 091904
9. Posadas A, Yau J-B, Ahn C H, et al. Epitaxial growth of multiferroic YMnO3 on GaN. Appl Phys Lett, 2005, 87(17), 171915
10. Chye Y, Liu T, Li D, et al. Molecular beam epitaxy of YmnO3 on c-plane GaN. Appl Phys Lett, 2006, 88: 132903
11. Tian W, Vaithyanathan V, Schlom D G, et al. Epitaxial integration of (0001) BiFeO3 with (0001) GaN. Appl Phys Lett, 2007, 90: 172908
12. Shen B, Li W P, Someya T, et al. Influence of ferroelectric polarization on the properties of two-dimensional electron gas in Pb(Zr0.53Ti0.47)O3/AlxGa1-x/GaN structures. Jpn J Appl Phys, 2002, 41: 2528-2530
13. Cao W, Bhaskar S, Li J, et al. Interfacial nanochemistry and electrical properties of Pb(Zr0.3Ti0.7)O3 films on GaN/sapphire. Thin Solid Films 2005, 484: 154-159
14. Zhu J, Wei X H, Zhang Y, et al. Study on interfacial strain behavior of functional oxide heterostructures. J Appl Phys, 2006, 100: 104106
15. Wei X H, Li Y R, Zhu J, et al. Epitaxial properties of ZnO thin films on SrTiO3 substrates grown by laser molecular beam epitaxy. Appl Phys Lett, 2007, 90: 151918
16. Yamada T, Wakiya N, Shinozaki K, et al. Epitaxial growth of SrTiO3 films on CeO2/yttria-stabilized zirconia/Si(001) with TiO2 atomic layer by pulsed-laser deposition. Appl Phys Lett, 2003, 83: 4815-4817
17. Yang S Y, Zhan Q, Yang P L, et al. Capacitance-voltage characteristics of BiFeO3/SrTiO3/GaN heteroepitaxial structures. Appl Phys Lett, 2007, 91: 022909
18. Wei X H, Li Y R, Jie W J, et al. Heteroepitaxial growth of ZnO on perovskite surfaces. J Phys D: Appl Phys, 2007, 40: 7502-7507
19. Zhu J, Zhao D, Luo W B, et al. Epitaxial growth of cubic AlN films on SrTiO3(100) substrates by pulsed laser deposition. Crystal Growth, 2008, 310: 731-737