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Journal of Applied Physics

Volumn 106, Issue 5, 2009, Pages

Sputtering yields of Si, SiC, and B4 C under nanodroplet bombardment at normal incidence

(2) Gamero Castao, Manuel a Mahadevan, Mahesh a

a University of California at Irvine (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ACCELERATION VOLTAGES; BEAMLETS; ELECTROSPRAYS; MOLECULAR FLUX; NANO-DROPLETS; NANODROPLET; NORMAL INCIDENCE; POLYCRYSTALLINE SILICON CARBIDE; PROFILOMETERS; SINGLE CRYSTAL SILICON; SPUTTERED MATERIALS; SPUTTERING RATE; SPUTTERING YIELDS; TIME-OF-FLIGHT SPECTROMETER;

BORON; ION SOURCES; POLYCRYSTALLINE MATERIALS; POLYSILICON; SILICON CARBIDE; SPUTTERING;

BORON CARBIDE;

EID: 70349342825 PISSN: 00218979 EISSN: None Source Type: Journal
DOI: 10.1063/1.3211304 Document Type: Article

Times cited : (26)

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