Computer simulation of SiC and B4C sputtering by Ar+ and He+ ions bombardment

Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

Volumn 127-128, Issue , 1997, Pages 260-264

  Pugacheva, T S ^a   Jurabekova, F G ^a   Miyagawa, Y ^b   Valiev, S Kh ^c  

^a TASHKENT STATE TECHNICAL UNIVERSITY   (Uzbekistan)

^b NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY AIST   (Japan)

^c S YU YUNUSOV INSTITUTE OF THE CHEMISTRY OF PLANT SUBSTANCES   (Uzbekistan)

Author keywords

[No Author keywords available]

Indexed keywords

ARGON; BORON CARBIDE; COMPUTER SIMULATION; COMPUTER SOFTWARE; HELIUM; MATHEMATICAL MODELS; MONTE CARLO METHODS; POINT DEFECTS; PROBABILITY; SILICON CARBIDE; SPUTTERING;

SOFTWARE PACKAGE CASNEW; SOFTWARE PACKAGE TRIM;

ION BOMBARDMENT;

EID: 0031547798     PISSN: 0168583X     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0168-583X(96)00936-6     Document Type: Article

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