Structural properties of N-rich a-Si-N:H films with a low electron-trapping rate

Journal of Physics D: Applied Physics

Volumn 30, Issue 7, 1997, Pages 1064-1076

  Dupont, G ^a   Caquineau, H ^a   Despax, B ^a   Berjoan, R ^b   Dollet, A ^b  

^a UNIVERSITÉ DE TOULOUSE   (France)

^b Centre National de la Recherche Scientifique   (France)

Author keywords

[No Author keywords available]

Indexed keywords

ABSORPTION SPECTROSCOPY; CAPACITANCE MEASUREMENT; CHEMICAL VAPOR DEPOSITION; HYDROGEN BONDS; HYDROGENATION; INFRARED SPECTROSCOPY; ION BOMBARDMENT; LIGHT POLARIZATION; SILICON NITRIDE; SURFACE STRUCTURE; VOLTAGE MEASUREMENT; X RAY PHOTOELECTRON SPECTROSCOPY;

ELECTRON TRAPPING RATES; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION;

AMORPHOUS FILMS;

EID: 0031557562     PISSN: 00223727     EISSN: None     Source Type: Journal    
DOI: 10.1088/0022-3727/30/7/002     Document Type: Article

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