Silicon microfluidic channels and microstructures in single photolithography step

DTIP of MEMS and MOEMS - Symposium on Design, Test, Integration and Packaging of MEMS/MOEMS

Volumn , Issue , 2009, Pages 419-423

  Pal, Prem ^a   Sato, Kazuo ^a  

^a NAGOYA UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

COMPLEMENTARY METAL OXIDE SEMICONDUCTOR PROCESS; ETCHING PROCESS; FABRICATION METHOD; INTERMEDIATE LAYERS; LOCAL OXIDATION OF SILICONS; MICROFLUIDIC CHANNEL; SI WAFER; TETRAMETHYL AMMONIUM HYDROXIDE; WET ANISOTROPIC ETCHING;

AMMONIUM COMPOUNDS; ETCHING; FLUIDIC DEVICES; METALLIC COMPOUNDS; MICROFLUIDICS; MICROSTRUCTURE; MOS DEVICES; PHOTOLITHOGRAPHY; SEMICONDUCTING SILICON; SEMICONDUCTING SILICON COMPOUNDS; SILICON NITRIDE; SILICON OXIDES; SURFACE ACTIVE AGENTS; WAFER BONDING;

SILICON WAFERS;

EID: 70349194882     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (24)

1. M. Elwenspoek and H. Jansen, Silicon Micromachining, Cambridge University Press, UK, 1998.
2. W. Lang, "Silicon microstructuring technology, " Mater. Sci. Eng. R, vol.17, 1-55, 1996.
3. N. Abedinov et al., "Micromachined piezoresistive cantilever array with integrated resistive microheater for calorimetry and mass detection, " J. Vac. Sci. Technol, vol.A 19, pp. 2884-2888, 2001.
4. Q. Wu, K.M. Lee, and C.C. Liu, "Development of chemical sensors using microfabrication and micromachining techniques, " Sensors Actuators B, vol.13-14, pp. 1-6, 1993.
5. D. Saya et al., "Si-piezoresistive microcantilevers for highly integrated parallel force detection applications, " Sensors Actuators A, vol.123-124, pp. 23-29, 2005.
6. B.L. Pruitt and T.W. Kenny, "Piezoresistive cantileveres and measurement systems for characterizing low force electrical contacts, " Sensors Actuators A, vol.104, pp. 68-77, 2003.4
7. Q.Y. Tong and U. Gosele Semiconductor Wafer Bonding: Science and Technology, John Wiley and Sons Inc., New York, 1999.
8. S. Mack, H. Baumann, U. Gosele, H. Werner, and R. Schlogl, "Analysis of bonding-related gas enclosure in micromechanical cavities sealed by silicon wafer bonding, " J. Electrochem. Soc., vol.144, pp. 1106-1111, 1997.
9. P. Pal and K. Sato, "Suspended Si Microstructures with Rounded Concave and Sharp Convex Corners Using Wafer Bonding and Wet Anisotropic Etching, " ECS Transactions, vol.16, pp. 133-140, 2008.
10. Y. Huang, A.S. Ergun, E. Haeggstrom, M.H. Badi, and B.T. Khuri-Yakub, "Fabricating capacitive micromachined ultrasonic transducers with wafer-bonding technology, " J. Microelectromech. Syst., vol.12, pp. 128-137, 2003.
11. M.A. Huff, A. D. Nikolich, and M.A. Schmidt, "Design of sealed cavity microstructures formed by silicon wafer bonding, " J. Microelectromech. Syst., vol.2, pp. 74-81, 1993.
12. J.W. Kwon and E.S. Kim, "Multi-level microfluidic channel routing with protected convex corners, " Sensors Actuators A, vol.97-98, pp. 729-733, 2002.
13. D. Cheng, M.A. Gosalvez, T. Hori, K. Sato, and M. Shikida, "Improvement in smoothness of anisotropically etched silicon surfaces: Effects of surfactant and TMAH concentrations, " Sensors and Actuators A, vol.125, pp. 415-421, 2006.
14. P. Pal, K. Sato, M. A. Gosalvez and M. Shikida, "Study of rounded concave and sharp edge convex corners undercutting in CMOS compatible anisotropic etchants, " J. Micromech. Microeng., vol.17, pp. 2299-2307, 2007.
15. C.R. Yang, P.Y. Chen, C.H. Yang, Y.C. Chiou and R.T. Lee, "Effects of various ion-typed surfactants on silicon anisotropic etching properties in KOH and TMAH solutions, " Sensors Actuators A, vol.119, pp. 271-281, 2005.
16. D. Resnik, D. Vrtacnik, U. Aljancic, M. Mozek, and S. Amon, "The role of Triton surfactant in anisotropic etching of {110} reflective planes on (100) silicon, " J. Micromech. Microeng., vol.15, pp. 1174-1183, 2005.
17. J.S. Jeon, S. Raghavan, and J.P. Carrejo, "Effect of Temperature on the Interaction of Silicon with Nonionic Surfactants in Alkaline Solutions, " J. Electrochem Soc., vol.143, pp. 277-283, 1996.
18. P. Pal, K. Sato, M.A. Gosalvez, and M. Shikida, "Study of corner compensating structures and fabrication of various shapes of MEMS structures in pure and surfactant added TMAH, " Sensors Actuators A, in press.
19. S. Sanchez, C. Gui, and M. Elwenspoek, "Spontaneous direct bonding of thick silicon nitride, " J. Micromech. Microeng., vol.7, pp. 111-113, 1997.
20. M.S. Ismail, R.W. Bower, J.L. Veteran, and O.J. Marsh, "silicon nitride direct bonding, " Electron Lett., vol.26, pp. 1045-1046, 1990.
21. M. Wiegand et al., "Wafer bonding of silicon wafers covered with various surface layers, " Sensors Actuators A, vol.86, pp. 91-95, 2000.
22. P. Pal and S. Chandra, "Bulk-micromachined structures inside anisotropically etched cavities, " Smart Mater and Struct., vol.13, pp. 1424-1429, 2004.
23. J. A. Plaza, J. Esteve, and E. Lora-Tamayo, "Simple technology for bulk accelerometer based on bond and etch back silicon on insulator wafers, " Sensors Actuators A, vol.68, pp. 299-302, 1998.
24. W.P. Maszara, P.P. Pronko, and A.W. McCormick, "Epi-less bond-and-etch-back silicon-on-insulator by MeV ion implantation, " Appl. Phys. Lett., vol.58, pp. 2779-2781.