Improvement in smoothness of anisotropically etched silicon surfaces: Effects of surfactant and TMAH concentrations

Sensors and Actuators, A: Physical

Volumn 125, Issue 2, 2006, Pages 415-421

  Cheng, Di ^a   Gosálvez, Miguel A ^a   Hori, Tatsuya ^a,b   Sato, Kazuo ^a,c,d,e,f   Shikida, Mitsuhiro ^a,c,f  

^a NAGOYA UNIVERSITY   (Japan)

^b Japan Research Institute Ltd   (Japan)

^c Japan Society of Mechanical Engineers   (Japan)

^d Japan Society for Precision Engineering   (Japan)

^e IEEE

^f Institute of Electrical Engineers of   (Japan)

Author keywords

Anisotropic etching; Etched surface roughness; Single crystal silicon; Surfacant NC 200; TMAH

Indexed keywords

ANISOTROPIC ETCHING; ETCHED SURFACE ROUGHNESS; SINGLE-CRYSTAL SILICON; SURFACANT NC-200; TMAH;

AMMONIUM COMPOUNDS; CONCENTRATION (PROCESS); ETCHING; SINGLE CRYSTALS; SURFACE ACTIVE AGENTS; SURFACE ROUGHNESS;

SILICON;

EID: 29144456600     PISSN: 09244247     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.sna.2005.08.022     Document Type: Article

References (10)

1. M. Sekimura Anisotropic etching of surfactant-added TMAH solution Proceedings of the MEMS '99 Orlando, FL, USA, January 17-21 1999 650 655
2. K. Sato, D. Uchikawa, and M. Shikida Change in orientation-dependent etching properties of single-crystal silicon caused by a surfactant added to TMAH solution Sens. Mater. 13 5 2001 285 291
3. I. Zubel, and M. Kramkowska The effect of alcohol additives on etching characteristics in KOH solutions Sens. Actuators A 101 2002 255 261
4. O. Powell, and H.B. Harrison Anisotropic etching of {1 0 0} and {1 1 0} planes in (1 0 0) silicon J. Micromech. Microeng. 11 2001 217 220
5. D. Cheng, K. Sato, and M. Shikida Change in etching properties of single crystal silicon caused by the difference of surfactants added to TMAH solutions Proceedings of the PCWES 2004 Montreal, Que., Canada, May 26-28 2004
6. K. Sato, M. Shikida, T. Yamashiro, K. Asaumi, Y. Iriye, and M. Yamamoto Anisotropic etching rates of single-crystal silicon for TMAH water solution as a function of crystallographic orientation Sens. Actuators A 73 1999 131 137
7. L.M. Landsberger, S. Naseh, M. Kahrizi, and M. Paranjape On hillocks generated during anisotropic etching of Si in TMAH J. Microelectromech. Syst. 5 1996 106 116
8. M.A. Gosálvez, and R.M. Nieminen Surface morphology during anisotropic wet chemical etching of crystalline silicon N. J. Phys. 5 2003 100.1 100.28
9. M.C. Elwenspoek On the mechanism of anisotropic etching of silicon J. Electrochem. Soc. 140 1993 2075 2080
10. M. Shikida, M. Ando, Y. Ishihara, T. Ando, K. Sato, and K. Asaumi Non-photolithographic pattern transfer for fabricating pen-shaped microneedle structures J. Micromech. Microeng. 14 2004 1462 1467