Controlled fabrication of Si nanostructures by high vacuum electron beam annealing

Physica E: Low-Dimensional Systems and Nanostructures

Volumn 41, Issue 10, 2009, Pages 1853-1858

  Fang, F ^a   Markwitz, A ^a,b  

^a GNS SCIENCE   (New Zealand)

^b VICTORIA UNIVERSITY OF WELLINGTON   (New Zealand)

Author keywords

Annealing duration; Annealing temperature; Controlled fabrication; Cooling rate; Electron beam annealing; Si nanowhiskers

Indexed keywords

ANNEALING TEMPERATURE; CONTROLLED FABRICATION; COOLING RATE; ELECTRON BEAM ANNEALING; SI NANOWHISKERS;

ANNEALING; COOLING; CRYSTAL WHISKERS; ELECTRON BEAMS; ELECTRONS; FABRICATION; FIELD EMISSION; FREEZING; SILICON; VACUUM;

NANOWHISKERS;

EID: 70349172653     PISSN: 13869477     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.physe.2009.02.024     Document Type: Article

References (22)

1. Xia Y., Yang P., Sun Y., Wu Y., Mayers B., Gates B., Yin Y., Kim F., and Yan H. Adv. Mater. 15 (2003) 353
2. Cui Y., Zhong Z., Wang D., Wang W.U., and Lieber C.M. Nano Letters 3 (2003) 149
3. Goldberger J., Hochbaum A.I., Fan R., and Yang P. Nano Letters 6 (2006) 973
4. Jayadevan K.P., and Tseng T.Y. J. Nanosci. Nanotechnol. 5 (2005) 1768
5. Hsu J.-F., Huang B.-R., Huang C.-S., and Chen H.-L. Jpn. J. Appl. Phys. 44 (2005) 2626
6. Zheng G., Patolsky F., Cui Y., Wang W.U., and Lieber C.M. Nat. Biotechnol. 23 (2005) 1294
7. Agarwal R., and Lieber C.M. Appl. Phys. A 85 (2006) 209
8. Wagner R.S., and Ellis W.C. Appl. Phys. Lett. 4 (1964) 89
9. Hochbaum A.I., Fan R., He R., and Yang P. Nano Letters 5 (2005) 457
10. Schubert L., Werner P., Zakharov N.D., et al. Appl. Phys. Lett. 84 (2004) 4968
11. Sivakov V., Heyroth F., Falk F., Gerth G., Kolb F., Long L., Gosele U., and Tan T.Y. J. Cryst. Growth 300 (2007) 288
12. Chen W., and Ahmed H. Appl. Phys. Lett. 63 (1993) 1116
13. Johnson S., Markwitz A., Rudolphi M., and Baumann H. J. Appl. Phys. 96 1 (2004) 605
14. Johnson S., Markwitz A., Rudolphi M., Baumann H., Kuo P.Y., Blaikie R., and Mucklich A. J. Appl. Phys. 97 (2005) 094301
15. Johnson S., Markwitz A., Rudolphi M., Baumann H., Oei S.P., Teo K.B.K., and Milne W.I. Appl. Phys. Lett. 85 (2004) 3277
16. Lu C.T., Johnson S., Lansley S.P., Blaikie R.J., and Markwitz A. J. Vac. Sci. Technol. B 23 (2005) 1445
17. Johnson S., Markwitz A., Rudolphi M., Baumann H., Oei S.P., Teo K.B.K., and Milne W.I. Curr. Appl. Phys. 6 (2006) 503
18. Johnson S., Zülicke U., and Markwitz A. J. Appl. Phys. 101 (2007) 123712
19. Maurer C., Kallweit R., Baumann H., Bethge K., and Krimmel E.F. Nucl. Instrum. Methods Phys. Res. B 80/81 (1993) 564
20. F. Fang, A. Markwitz, J. Nanosci. Nanotechnol, 9 (2009) 2950
21. Iwasaki H., Ito T., Gotoh M., Nan L., and Soduh K. Lect. Notes Phys. 588 (2002) 231
22. Samad S.A., Bary M.A., Kilian K., Ritman J., and Uehlemann J. IKP Annu. Rep. (2004) 113