Effect of crystal orientation on self-assembled silicon nanostructures formed by electron-beam annealing

Journal of Applied Physics

Volumn 97, Issue 9, 2005, Pages

  Johnson, S ^a   Markwitz, A ^a,b   Rudolphi, M ^c   Baumann, H ^c   Kuo, P Y ^d   Blaikie, R ^b,d   Mucklich A ^e  

^a GNS SCIENCE   (New Zealand)

^b MACDIARMID INSTITUTE FOR ADVANCED MATERIALS AND NANOTECHNOLOGY   (New Zealand)

^c GOETHE UNIVERSITY   (Germany)

^d UNIVERSITY OF CANTERBURY   (New Zealand)

^e INSTITUTE OF ION BEAM PHYSICS AND MATERIALS RESEARCH   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRON-BEAM ANNEALING (EBA); POTENTIAL BARRIERS; SILICON NANOSTRUCTURES; SURFACE STRUCTURE ANALYSIS;

AMPLIFICATION; ANNEALING; ATOMIC FORCE MICROSCOPY; CRYSTAL ORIENTATION; CRYSTAL SYMMETRY; ELECTRON BEAMS; EPITAXIAL GROWTH; INTERFACIAL ENERGY; PYROLYSIS; SELF ASSEMBLY; SILICON; TRANSMISSION ELECTRON MICROSCOPY;

NANOSTRUCTURED MATERIALS;

EID: 18844447817     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1877819     Document Type: Review

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