Nanostructuring of silicon (100) using electron beam rapid thermal annealing

Journal of Applied Physics

Volumn 96, Issue 1, 2004, Pages 605-609

  Johnson, S ^a   Markwitz, A ^a,c   Rudolphi, M ^b   Baumann, H ^b  

^a GNS SCIENCE   (New Zealand)

^b GOETHE UNIVERSITY   (Germany)

^c VICTORIA UNIVERSITY OF WELLINGTON   (New Zealand)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC FORCE MICROSCOPY; CRYSTAL GROWTH; DESORPTION; DIFFUSION; ELECTRON BEAMS; ELECTRON IRRADIATION; HIGH TEMPERATURE EFFECTS; NANOSTRUCTURED MATERIALS; NANOTECHNOLOGY; POTENTIAL ENERGY; PYROLYSIS; RAPID THERMAL ANNEALING; SCANNING ELECTRON MICROSCOPY;

CRYSTAL RIPENING PROCESSES; DIFFUSION BARRIERS; ELECTRON BEAM RAPID THERMAL ANNEALING (EB-RTA); POTENTIAL ENERGY SURFACES;

SILICON;

EID: 3142685653     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1756695     Document Type: Article

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